Consequences of quantum noise control for the relaxation resonance frequency and phase noise in heterogeneous Silicon/III-V lasers.

Kim, Dongwan; Harfouche, Mark; Wang, Huolei; Santis, Christos T; Vilenchik, Yaakov; Satyan, Naresh; Rakuljic, George; Yariv, Amnon

Kim, Dongwan; Harfouche, Mark; Wang, Huolei; Santis, Christos T; Vilenchik, Yaakov; Satyan, Naresh; Rakuljic, George; Yariv, Amnon.

Afiliação

Kim D; Department of Applied Physics and Materials Science, California Institute of Technology, Pasadena, CA, 91125, USA. dongwan.kim@caltech.edu.
Harfouche M; Department of Electrical Engineering, California Institute of Technology, Pasadena, CA, 91125, USA.
Wang H; Department of Applied Physics and Materials Science, California Institute of Technology, Pasadena, CA, 91125, USA.
Santis CT; Department of Applied Physics and Materials Science, California Institute of Technology, Pasadena, CA, 91125, USA.
Vilenchik Y; Department of Applied Physics and Materials Science, California Institute of Technology, Pasadena, CA, 91125, USA.
Satyan N; Telaris Inc., Santa Monica, CA, 90403, USA.
Rakuljic G; Telaris Inc., Santa Monica, CA, 90403, USA.
Yariv A; Department of Applied Physics and Materials Science, California Institute of Technology, Pasadena, CA, 91125, USA.

Sci Rep ; 12(1): 312, 2022 Jan 10.

Article em En | MEDLINE | ID: mdl-35013333

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Sci Rep Ano de publicação: 2022 Tipo de documento: Article País de afiliação: Estados Unidos

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