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Dynamic-quenching of a single-photon avalanche photodetector using an adaptive resistive switch.
Zheng, Jiyuan; Xue, Xingjun; Ji, Cheng; Yuan, Yuan; Sun, Keye; Rosenmann, Daniel; Wang, Lai; Wu, Jiamin; Campbell, Joe C; Guha, Supratik.
Afiliação
  • Zheng J; Pritzker School of Molecular Engineering, the University of Chicago, Chicago, IL, 60637, USA. zhengjiyuan@mail.tsinghua.edu.cn.
  • Xue X; Beijing National Research Center for Information Science and Technology, Tsinghua University, Beijing, 100084, China. zhengjiyuan@mail.tsinghua.edu.cn.
  • Ji C; Electrical and Computer Engineering Department, University of Virginia, Charlottesville, VA, 22904, USA.
  • Yuan Y; Pritzker School of Molecular Engineering, the University of Chicago, Chicago, IL, 60637, USA.
  • Sun K; Electrical and Computer Engineering Department, University of Virginia, Charlottesville, VA, 22904, USA.
  • Rosenmann D; Electrical and Computer Engineering Department, University of Virginia, Charlottesville, VA, 22904, USA.
  • Wang L; Center for Nanoscale Materials, Argonne National Laboratory, Argonne, IL, 60439, USA.
  • Wu J; Beijing National Research Center for Information Science and Technology, Tsinghua University, Beijing, 100084, China.
  • Campbell JC; Department of Electronic Engineering, Tsinghua University, Beijing, 100084, China.
  • Guha S; Beijing National Research Center for Information Science and Technology, Tsinghua University, Beijing, 100084, China.
Nat Commun ; 13(1): 1517, 2022 Mar 21.
Article em En | MEDLINE | ID: mdl-35314686
ABSTRACT
One of the most common approaches for quenching single-photon avalanche diodes is to use a passive resistor in series with it. A drawback of this approach has been the limited recovery speed of the single-photon avalanche diodes. High resistance is needed to quench the avalanche, leading to slower recharging of the single-photon avalanche diodes depletion capacitor. We address this issue by replacing a fixed quenching resistor with a bias-dependent adaptive resistive switch. Reversible generation of metallic conduction enables switching between low and high resistance states under unipolar bias. As an example, using a Pt/Al2O3/Ag resistor with a commercial silicon single-photon avalanche diodes, we demonstrate avalanche pulse widths as small as ~30 ns, 10× smaller than a passively quenched approach, thus significantly improving the single-photon avalanche diodes frequency response. The experimental results are consistent with a model where the adaptive resistor dynamically changes its resistance during discharging and recharging the single-photon avalanche diodes.

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nat Commun Assunto da revista: BIOLOGIA / CIENCIA Ano de publicação: 2022 Tipo de documento: Article País de afiliação: Estados Unidos

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nat Commun Assunto da revista: BIOLOGIA / CIENCIA Ano de publicação: 2022 Tipo de documento: Article País de afiliação: Estados Unidos