Room temperature continuous-wave operated 2.0-W GaN-based ultraviolet laser diodes.
Opt Lett
; 47(7): 1666-1668, 2022 Apr 01.
Article
em En
| MEDLINE
| ID: mdl-35363704
ABSTRACT
Temperature characteristics of near-UV laser diodes (LDs) with a lasing wavelength of 384â
nm are investigated. The characteristic temperature of threshold current (T0) of the UV LDs is low. Thus, the performance of the UV LDs under continuous wave (CW) operation is not as good as under pulsed operation especially at a high injection current. In addition, it is found that self-heating is a key factor for CW characteristics of the UV LDs, where suppression of the self-heating by using thick waveguide layers can increase the critical current of thermal rollover of the UV LD's operation. A high CW output power of 2.0â
W is achieved for an InGaN near-UV LD with the n-side down on a sub-mount, whose threshold current density is 1.27â
kA/cm2 and the highest wall plug efficiency (WPE) is approximately 15.9% at an injection current of 1.2â
A.
Texto completo:
1
Coleções:
01-internacional
Base de dados:
MEDLINE
Idioma:
En
Revista:
Opt Lett
Ano de publicação:
2022
Tipo de documento:
Article