Mobility enhancement in heavily doped semiconductors via electron cloaking.

Zhou, Jiawei; Zhu, Hangtian; Song, Qichen; Ding, Zhiwei; Mao, Jun; Ren, Zhifeng; Chen, Gang

Zhou, Jiawei; Zhu, Hangtian; Song, Qichen; Ding, Zhiwei; Mao, Jun; Ren, Zhifeng; Chen, Gang.

Afiliação

Zhou J; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA. jwzhou@stanford.edu.
Zhu H; Department of Physics and Texas Center for Superconductivity at the University of Houston (TcSUH), University of Houston, Houston, TX, 77204, USA.
Song Q; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.
Ding Z; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.
Mao J; Department of Physics and Texas Center for Superconductivity at the University of Houston (TcSUH), University of Houston, Houston, TX, 77204, USA.
Ren Z; Department of Physics and Texas Center for Superconductivity at the University of Houston (TcSUH), University of Houston, Houston, TX, 77204, USA.
Chen G; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA. gchen2@mit.edu.

Nat Commun ; 13(1): 2482, 2022 May 06.

Article em En | MEDLINE | ID: mdl-35523766

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Tipo de estudo: Guideline Idioma: En Revista: Nat Commun Assunto da revista: BIOLOGIA / CIENCIA Ano de publicação: 2022 Tipo de documento: Article País de afiliação: Estados Unidos

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