Temperature-Driven &#945;-ß Phase Transformation and Enhanced Electronic Property of 2H &#945;-In<sub>2</sub>Se<sub>3</sub>.

Lyu, Fengjiao; Li, Xuan; Tian, Jiamin; Li, Zhiwei; Liu, Bo; Chen, Qing

Temperature-Driven α-ß Phase Transformation and Enhanced Electronic Property of 2H α-In₂Se₃.

Lyu, Fengjiao; Li, Xuan; Tian, Jiamin; Li, Zhiwei; Liu, Bo; Chen, Qing.

Afiliação

Lyu F; Key Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics, Peking University, Beijing 100871, China.
Li X; Key Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics, Peking University, Beijing 100871, China.
Tian J; Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China.
Li Z; Key Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics, Peking University, Beijing 100871, China.
Liu B; Key Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics, Peking University, Beijing 100871, China.
Chen Q; Key Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics, Peking University, Beijing 100871, China.

ACS Appl Mater Interfaces ; 2022 May 12.

Article em En | MEDLINE | ID: mdl-35548977

Palavras-chave

2H α-In2Se3; electronic properties; field-effect transistor; phase transformation; thermal annealing

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Assunto da revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Ano de publicação: 2022 Tipo de documento: Article País de afiliação: China

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