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High-Resolution Mapping of Strain Partitioning and Relaxation in InGaN/GaN Nanowire Heterostructures.
Park, Bumsu; Lee, Ja Kyung; Koch, Christoph T; Wölz, Martin; Geelhaar, Lutz; Oh, Sang Ho.
Afiliação
  • Park B; Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Republic of Korea.
  • Lee JK; CEMES-CNRS, 29 rue J. Marvig, Toulouse, 31 055, France.
  • Koch CT; Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Republic of Korea.
  • Wölz M; Department of Physics, Humboldt University of Berlin, Berlin, 12489, Germany.
  • Geelhaar L; Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V., Hausvogteiplatz 5-7, Berlin, 10117, Germany.
  • Oh SH; Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V., Hausvogteiplatz 5-7, Berlin, 10117, Germany.
Adv Sci (Weinh) ; 9(22): e2200323, 2022 Aug.
Article em En | MEDLINE | ID: mdl-35665488
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Adv Sci (Weinh) Ano de publicação: 2022 Tipo de documento: Article
Texto completo
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PubMed Links
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Adv Sci (Weinh) Ano de publicação: 2022 Tipo de documento: Article