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Unraveling the Correlation between Raman and Photoluminescence in Monolayer MoS2 through Machine-Learning Models.
Lu, Ang-Yu; Martins, Luiz Gustavo Pimenta; Shen, Pin-Chun; Chen, Zhantao; Park, Ji-Hoon; Xue, Mantian; Han, Jinchi; Mao, Nannan; Chiu, Ming-Hui; Palacios, Tomás; Tung, Vincent; Kong, Jing.
Afiliação
  • Lu AY; Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.
  • Martins LGP; Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.
  • Shen PC; Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.
  • Chen Z; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.
  • Park JH; Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.
  • Xue M; Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.
  • Han J; Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.
  • Mao N; Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.
  • Chiu MH; Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.
  • Palacios T; Physical Science and Engineering Division, King Abdullah University of Science & Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia.
  • Tung V; Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.
  • Kong J; Physical Science and Engineering Division, King Abdullah University of Science & Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia.
Adv Mater ; 34(34): e2202911, 2022 Aug.
Article em En | MEDLINE | ID: mdl-35790036
2D transition metal dichalcogenides (TMDCs) with intense and tunable photoluminescence (PL) have opened up new opportunities for optoelectronic and photonic applications such as light-emitting diodes, photodetectors, and single-photon emitters. Among the standard characterization tools for 2D materials, Raman spectroscopy stands out as a fast and non-destructive technique capable of probing material's crystallinity and perturbations such as doping and strain. However, a comprehensive understanding of the correlation between photoluminescence and Raman spectra in monolayer MoS2 remains elusive due to its highly nonlinear nature. Here, the connections between PL signatures and Raman modes are systematically explored, providing comprehensive insights into the physical mechanisms correlating PL and Raman features. This study's analysis further disentangles the strain and doping contributions from the Raman spectra through machine-learning models. First, a dense convolutional network (DenseNet) to predict PL maps by spatial Raman maps is deployed. Moreover, a gradient boosted trees model (XGBoost) with Shapley additive explanation (SHAP) to bridge the impact of individual Raman features in PL features is applied. Last, a support vector machine (SVM) to project PL features on Raman frequencies is adopted. This work may serve as a methodology for applying machine learning to characterizations of 2D materials.
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Tipo de estudo: Prognostic_studies Idioma: En Revista: Adv Mater Assunto da revista: BIOFISICA / QUIMICA Ano de publicação: 2022 Tipo de documento: Article País de afiliação: Estados Unidos

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Tipo de estudo: Prognostic_studies Idioma: En Revista: Adv Mater Assunto da revista: BIOFISICA / QUIMICA Ano de publicação: 2022 Tipo de documento: Article País de afiliação: Estados Unidos