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Bioresorbable thin-film silicon diodes for the optoelectronic excitation and inhibition of neural activities.
Huang, Yunxiang; Cui, Yuting; Deng, Hanjie; Wang, Jingjing; Hong, Rongqi; Hu, Shuhan; Hou, Hanqing; Dong, Yuanrui; Wang, Huachun; Chen, Junyu; Li, Lizhu; Xie, Yang; Sun, Pengcheng; Fu, Xin; Yin, Lan; Xiong, Wei; Shi, Song-Hai; Luo, Minmin; Wang, Shirong; Li, Xiaojian; Sheng, Xing.
Afiliação
  • Huang Y; Department of Electronic Engineering, Beijing National Research Center for Information Science and Technology, Institute for Precision Medicine, Center for Flexible Electronics Technology, Tsinghua University, Beijing, China.
  • Cui Y; School of Materials Science and Engineering, The Key Laboratory of Advanced Materials of Ministry of Education, State Key Laboratory of New Ceramics and Fine Processing, Center for Flexible Electronics Technology, Tsinghua University, Beijing, China.
  • Deng H; IDG/McGovern Institute for Brain Research, Tsinghua University, Beijing, China.
  • Wang J; Chinese Institute for Brain Research, Beijing, China.
  • Hong R; National Institute of Biological Sciences, Beijing, China.
  • Hu S; CAS Key Laboratory of Brain Connectome and Manipulation, the Brain Cognition and Brain Disease Institute (BCBDI), Shenzhen Institute of Advanced Technology, Shenzhen-Hong Kong Institute of Brain Science-Shenzhen Fundamental Research Institutions, Shenzhen, China.
  • Hou H; CAS Key Laboratory of Brain Connectome and Manipulation, the Brain Cognition and Brain Disease Institute (BCBDI), Shenzhen Institute of Advanced Technology, Shenzhen-Hong Kong Institute of Brain Science-Shenzhen Fundamental Research Institutions, Shenzhen, China.
  • Dong Y; CAS Key Laboratory of Brain Connectome and Manipulation, the Brain Cognition and Brain Disease Institute (BCBDI), Shenzhen Institute of Advanced Technology, Shenzhen-Hong Kong Institute of Brain Science-Shenzhen Fundamental Research Institutions, Shenzhen, China.
  • Wang H; IDG/McGovern Institute for Brain Research, Tsinghua University, Beijing, China.
  • Chen J; School of Life Sciences, Tsinghua University, Beijing, China.
  • Li L; IDG/McGovern Institute for Brain Research, Tsinghua University, Beijing, China.
  • Xie Y; School of Life Sciences, Tsinghua University, Beijing, China.
  • Sun P; Beijing Advanced Innovation Center for Intelligent Robots and Systems, Beijing Institute of Technology, Beijing, China.
  • Fu X; Department of Electronic Engineering, Beijing National Research Center for Information Science and Technology, Institute for Precision Medicine, Center for Flexible Electronics Technology, Tsinghua University, Beijing, China.
  • Yin L; Department of Electronic Engineering, Beijing National Research Center for Information Science and Technology, Institute for Precision Medicine, Center for Flexible Electronics Technology, Tsinghua University, Beijing, China.
  • Xiong W; Department of Electronic Engineering, Beijing National Research Center for Information Science and Technology, Institute for Precision Medicine, Center for Flexible Electronics Technology, Tsinghua University, Beijing, China.
  • Shi SH; Department of Electronic Engineering, Beijing National Research Center for Information Science and Technology, Institute for Precision Medicine, Center for Flexible Electronics Technology, Tsinghua University, Beijing, China.
  • Luo M; School of Materials Science and Engineering, The Key Laboratory of Advanced Materials of Ministry of Education, State Key Laboratory of New Ceramics and Fine Processing, Center for Flexible Electronics Technology, Tsinghua University, Beijing, China.
  • Wang S; School of Materials Science and Engineering, The Key Laboratory of Advanced Materials of Ministry of Education, State Key Laboratory of New Ceramics and Fine Processing, Center for Flexible Electronics Technology, Tsinghua University, Beijing, China.
  • Li X; School of Materials Science and Engineering, The Key Laboratory of Advanced Materials of Ministry of Education, State Key Laboratory of New Ceramics and Fine Processing, Center for Flexible Electronics Technology, Tsinghua University, Beijing, China.
  • Sheng X; IDG/McGovern Institute for Brain Research, Tsinghua University, Beijing, China.
Nat Biomed Eng ; 7(4): 486-498, 2023 04.
Article em En | MEDLINE | ID: mdl-36065014
ABSTRACT
Neural activities can be modulated by leveraging light-responsive nanomaterials as interfaces for exerting photothermal, photoelectrochemical or photocapacitive effects on neurons or neural tissues. Here we show that bioresorbable thin-film monocrystalline silicon pn diodes can be used to optoelectronically excite or inhibit neural activities by establishing polarity-dependent positive or negative photovoltages at the semiconductor/solution interface. Under laser illumination, the silicon-diode optoelectronic interfaces allowed for the deterministic depolarization or hyperpolarization of cultured neurons as well as the upregulated or downregulated intracellular calcium dynamics. The optoelectronic interfaces can also be mounted on nerve tissue to activate or silence neural activities in peripheral and central nervous tissues, as we show in mice with exposed sciatic nerves and somatosensory cortices. Bioresorbable silicon-based optoelectronic thin films that selectively excite or inhibit neural tissue may find advantageous biomedical applicability.
Assuntos

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Assunto principal: Silício / Nanoestruturas Limite: Animals Idioma: En Revista: Nat Biomed Eng Ano de publicação: 2023 Tipo de documento: Article País de afiliação: China

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Assunto principal: Silício / Nanoestruturas Limite: Animals Idioma: En Revista: Nat Biomed Eng Ano de publicação: 2023 Tipo de documento: Article País de afiliação: China