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Reversibly Controlled Ternary Polar States and Ferroelectric Bias Promoted by Boosting Square-Tensile-Strain.
Lee, Jun Han; Duong, Nguyen Xuan; Jung, Min-Hyoung; Lee, Hyun-Jae; Kim, Ahyoung; Yeo, Youngki; Kim, Junhyung; Kim, Gye-Hyeon; Cho, Byeong-Gwan; Kim, Jaegyu; Naqvi, Furqan Ul Hassan; Bae, Jong-Seong; Kim, Jeehoon; Ahn, Chang Won; Kim, Young-Min; Song, Tae Kwon; Ko, Jae-Hyeon; Koo, Tae-Yeong; Sohn, Changhee; Park, Kibog; Yang, Chan-Ho; Yang, Sang Mo; Lee, Jun Hee; Jeong, Hu Young; Kim, Tae Heon; Oh, Yoon Seok.
Afiliação
  • Lee JH; Department of Physics, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea.
  • Duong NX; Department of Physics and Energy Harvest-Storage Research Center (EHSRC), University of Ulsan, Ulsan, 44610, Republic of Korea.
  • Jung MH; Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Republic of Korea.
  • Lee HJ; School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea.
  • Kim A; Department of Physics, Sogang University, Seoul, 04107, Republic of Korea.
  • Yeo Y; Department of Physics & Center for Lattice Defectronics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Republic of Korea.
  • Kim J; Department of Electrical Engineering, Ulsan National Institute of Science and Technology, Ulsan, 44919, Republic of Korea.
  • Kim GH; Department of Physics, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea.
  • Cho BG; Pohang Accelerator Laboratory, Pohang University of Science and Technology (POSTECH), Pohang, Gyeongbuk, 790-784, Republic of Korea.
  • Kim J; Department of Physics & Center for Lattice Defectronics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Republic of Korea.
  • Naqvi FUH; School of Nano Convergence Technology, Nano Convergence Technology Center, Hallym University, Chuncheon, 24252, Republic of Korea.
  • Bae JS; Busan Center, Korea Basic Science Institute (KBSI), Busan, 46742, Republic of Korea.
  • Kim J; Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang, Gyeongbuk, 790-784, Republic of Korea.
  • Ahn CW; Department of Physics and Energy Harvest-Storage Research Center (EHSRC), University of Ulsan, Ulsan, 44610, Republic of Korea.
  • Kim YM; Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Republic of Korea.
  • Song TK; Department of Materials Convergence and System Engineering, Changwon National University, Changwon, Gyeongnam, 51140, Republic of Korea.
  • Ko JH; School of Nano Convergence Technology, Nano Convergence Technology Center, Hallym University, Chuncheon, 24252, Republic of Korea.
  • Koo TY; Pohang Accelerator Laboratory, Pohang University of Science and Technology (POSTECH), Pohang, Gyeongbuk, 790-784, Republic of Korea.
  • Sohn C; Department of Physics, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea.
  • Park K; Department of Physics, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea.
  • Yang CH; Department of Electrical Engineering, Ulsan National Institute of Science and Technology, Ulsan, 44919, Republic of Korea.
  • Yang SM; Department of Physics & Center for Lattice Defectronics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Republic of Korea.
  • Lee JH; Department of Physics, Sogang University, Seoul, 04107, Republic of Korea.
  • Jeong HY; School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea.
  • Kim TH; UNIST Central Research Facilities, Ulsan National Institute of Science and Technology, Ulsan, 44919, Republic of Korea.
  • Oh YS; Department of Physics and Energy Harvest-Storage Research Center (EHSRC), University of Ulsan, Ulsan, 44610, Republic of Korea.
Adv Mater ; 34(42): e2205825, 2022 Oct.
Article em En | MEDLINE | ID: mdl-36069028
ABSTRACT
Interaction between dipoles often emerges intriguing physical phenomena, such as exchange bias in the magnetic heterostructures and magnetoelectric effect in multiferroics, which lead to advances in multifunctional heterostructures. However, the defect-dipole tends to be considered the undesired to deteriorate the electronic functionality. Here, deterministic switching between the ferroelectric and the pinched states by exploiting a new substrate of cubic perovskite, BaZrO3 is reported, which boosts the square-tensile-strain to BaTiO3 and promotes four-variants in-plane spontaneous polarization with oxygen vacancy creation. First-principles calculations propose a complex of an oxygen vacancy and two Ti3+ ions coins a charge-neutral defect-dipole. Cooperative control of the defect-dipole and the spontaneous polarization reveals ternary in-plane polar states characterized by biased/pinched hysteresis loops. Furthermore, it is experimentally demonstrated that three electrically controlled polar-ordering states lead to switchable and nonvolatile dielectric states for application of nondestructive electro-dielectric memory. This discovery opens a new route to develop functional materials via manipulating defect-dipoles and offers a novel platform to advance heteroepitaxy beyond the prevalent perovskite substrates.
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Adv Mater Assunto da revista: BIOFISICA / QUIMICA Ano de publicação: 2022 Tipo de documento: Article

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Adv Mater Assunto da revista: BIOFISICA / QUIMICA Ano de publicação: 2022 Tipo de documento: Article