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Direct growth of SnS2 nanowall photoanode for high responsivity self-powered photodetectors.
Deng, Shunlan; Chen, Yi; Li, Qi; Sun, Jie; Lei, Zhibin; Hu, Peng; Liu, Zong-Huai; He, Xuexia; Ma, Renzhi.
Afiliação
  • Deng S; Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Shaanxi 710119, China. xxhe@snnu.edu.cn.
  • Chen Y; Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Shaanxi 710119, China. xxhe@snnu.edu.cn.
  • Li Q; Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Shaanxi 710119, China. xxhe@snnu.edu.cn.
  • Sun J; Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Shaanxi 710119, China. xxhe@snnu.edu.cn.
  • Lei Z; Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Shaanxi 710119, China. xxhe@snnu.edu.cn.
  • Hu P; School of Physics, Northwest University, Shaanxi 710069, China.
  • Liu ZH; Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Shaanxi 710119, China. xxhe@snnu.edu.cn.
  • He X; Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Shaanxi 710119, China. xxhe@snnu.edu.cn.
  • Ma R; International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 305-0044 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan. MA.Renzhi@nims.go.jp.
Nanoscale ; 14(38): 14097-14105, 2022 Oct 06.
Article em En | MEDLINE | ID: mdl-36069814
ABSTRACT
Tin sulfide (SnS2) has attracted growing attention due to its environmental friendliness, tunable band gap and potential applications for high-sensitivity photodetectors. However, the low responsivity and slow response speed severely hinder its further applications. In this work, SnS2 nanowalls have been successfully fabricated on FTO substrates by a facile hydrothermal approach. The prepared SnS2 nanowalls were used as a photoanode material for photoelectrochemical (PEC)-type photodetectors. The SnS2 based PEC-type photodetectors exhibit excellent photocurrent density (39.06 µA cm-2), responsivity (1460 µA W-1), long-term cycling stability and self-powered behavior. The responsivity of the detector is higher than that of most reported SnS2 based PEC-type photodetectors and even some SnS2 based photoconductive photodetectors. The high responsivity and self-powered behavior enable the extended potential applications of SnS2 in PEC-type photodetectors.

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nanoscale Ano de publicação: 2022 Tipo de documento: Article País de afiliação: China

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nanoscale Ano de publicação: 2022 Tipo de documento: Article País de afiliação: China