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Confined Monolayer Ag As a Large Gap 2D Semiconductor and Its Momentum Resolved Excited States.
Lee, Woojoo; Wang, Yuanxi; Qin, Wei; Kim, Hyunsue; Liu, Mengke; Nunley, T Nathan; Fang, Bin; Maniyara, Rinu; Dong, Chengye; Robinson, Joshua A; Crespi, Vincent H; Li, Xiaoqin; MacDonald, Allan H; Shih, Chih-Kang.
Afiliação
  • Lee W; Department of Physics, The University of Texas at Austin, Austin, Texas 78712, United States.
  • Wang Y; Center for Dynamics and Control of Materials, The University of Texas at Austin, Austin, Texas 78712, United States.
  • Qin W; Two-Dimensional Crystal Consortium and Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802, United States.
  • Kim H; Department of Physics, University of North Texas, Denton, Texas 76203, United States.
  • Liu M; Department of Physics, The University of Texas at Austin, Austin, Texas 78712, United States.
  • Nunley TN; Center for Dynamics and Control of Materials, The University of Texas at Austin, Austin, Texas 78712, United States.
  • Fang B; Department of Physics, The University of Texas at Austin, Austin, Texas 78712, United States.
  • Maniyara R; Center for Dynamics and Control of Materials, The University of Texas at Austin, Austin, Texas 78712, United States.
  • Dong C; Department of Physics, The University of Texas at Austin, Austin, Texas 78712, United States.
  • Robinson JA; Center for Dynamics and Control of Materials, The University of Texas at Austin, Austin, Texas 78712, United States.
  • Crespi VH; Department of Physics, The University of Texas at Austin, Austin, Texas 78712, United States.
  • Li X; Center for Dynamics and Control of Materials, The University of Texas at Austin, Austin, Texas 78712, United States.
  • MacDonald AH; Center for Dynamics and Control of Materials, The University of Texas at Austin, Austin, Texas 78712, United States.
  • Shih CK; Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States.
Nano Lett ; 22(19): 7841-7847, 2022 Oct 12.
Article em En | MEDLINE | ID: mdl-36126277
ABSTRACT
2D materials have intriguing quantum phenomena that are distinctively different from their bulk counterparts. Recently, epitaxially synthesized wafer-scale 2D metals, composed of elemental atoms, are attracting attention not only for their potential applications but also for exotic quantum effects such as superconductivity. By mapping momentum-resolved electronic states using time-resolved and angle-resolved photoemission spectroscopy (ARPES), we reveal that monolayer Ag confined between bilayer graphene and SiC is a large gap (>1 eV) 2D semiconductor, consistent with ab initio GW calculations. The measured valence band dispersion matches the GW quasiparticle band structure. However, the conduction band dispersion shows an anomalously large effective mass of 2.4 m0. Possible mechanisms for this large enhancement in the "apparent mass" are discussed.
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nano Lett Ano de publicação: 2022 Tipo de documento: Article País de afiliação: Estados Unidos
Texto completo
Imprimir
XML
PubMed Links
Buscar no Google

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nano Lett Ano de publicação: 2022 Tipo de documento: Article País de afiliação: Estados Unidos