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Reduced dopant-induced scattering in remote charge-transfer-doped MoS2 field-effect transistors.
Jang, Juntae; Kim, Jae-Keun; Shin, Jiwon; Kim, Jaeyoung; Baek, Kyeong-Yoon; Park, Jaehyoung; Park, Seungmin; Kim, Young Duck; Parkin, Stuart S P; Kang, Keehoon; Cho, Kyungjune; Lee, Takhee.
Afiliação
  • Jang J; Department of Physics and Astronomy, Seoul National University, Seoul 08826, Korea.
  • Kim JK; Max-Planck Institute of Microstructure Physics, Weinberg 2, 06120 Halle, Saale, Germany.
  • Shin J; Department of Physics and Astronomy, Seoul National University, Seoul 08826, Korea.
  • Kim J; Department of Physics and Astronomy, Seoul National University, Seoul 08826, Korea.
  • Baek KY; Department of Physics and Astronomy, Seoul National University, Seoul 08826, Korea.
  • Park J; Department of Physics and Astronomy, Seoul National University, Seoul 08826, Korea.
  • Park S; Department of Physics, Kyung Hee University, Seoul 02447, Korea.
  • Kim YD; Department of Physics, Kyung Hee University, Seoul 02447, Korea.
  • Parkin SSP; Max-Planck Institute of Microstructure Physics, Weinberg 2, 06120 Halle, Saale, Germany.
  • Kang K; Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Korea.
  • Cho K; Institute of Applied Physics, Seoul National University, Seoul 08826, Korea.
  • Lee T; Soft Hybrid Materials Research Center, Korea Institute of Science and Technology, Seoul 02792, Korea.
Sci Adv ; 8(38): eabn3181, 2022 Sep 23.
Article em En | MEDLINE | ID: mdl-36129985
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Sci Adv Ano de publicação: 2022 Tipo de documento: Article
Texto completo
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XML
PubMed Links
Buscar no Google

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Sci Adv Ano de publicação: 2022 Tipo de documento: Article