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Twin-Boundary Reduced Surface Diffusion on Electrically Stressed Copper Nanowires.
Weng, Wei-Lun; Chen, Hsin-Yu; Ting, Yi-Hsin; Chen, Hsin-Yi Tiffany; Wu, Wen-Wei; Tu, King-Ning; Liao, Chien-Neng.
Afiliação
  • Weng WL; Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu30013, Taiwan, ROC.
  • Chen HY; Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu30013, Taiwan, ROC.
  • Ting YH; Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu30013, Taiwan, ROC.
  • Chen HT; Department of Engineering and System Science, National Tsing Hua University, Hsinchu30013, Taiwan, ROC.
  • Wu WW; Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu30013, Taiwan, ROC.
  • Tu KN; Department of Materials Science and Engineering and Department of Electrical Engineering, City University of Hong Kong, Kowloon, Hong Kong.
  • Liao CN; Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu30013, Taiwan, ROC.
Nano Lett ; 22(22): 9071-9076, 2022 Nov 23.
Article em En | MEDLINE | ID: mdl-36342418
Surface diffusion is intimately correlated with crystal orientation and surface structure. Fast surface diffusion accelerates phase transformation and structural evolution of materials. Here, through in situ transmission electron microscopy observation, we show that a copper nanowire with dense nanoscale coherent twin-boundary (CTB) defects evolves into a zigzag configuration under electric-current driven surface diffusion. The hindrance at the CTB-intercepted concave triple junctions decreases the effective surface diffusivity by almost 1 order of magnitude. The energy barriers for atomic migration at the concave junctions and different faceted surfaces are computed using density functional theory. We proposed that such a stable zigzag surface is shaped not only by the high-diffusivity facets but also by the stalled atomic diffusion at the concave junctions. This finding provides a defect-engineering route to develop robust interconnect materials against electromigration-induced failures for nanoelectronic devices.
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nano Lett Ano de publicação: 2022 Tipo de documento: Article

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nano Lett Ano de publicação: 2022 Tipo de documento: Article