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High-Gain MoS2/Ta2NiSe5 Heterojunction Photodetectors with Charge Transfer and Suppressing Dark Current.
Guo, Tingting; Song, Xiufeng; Wei, Pengfei; Li, Jing; Gao, Yuewen; Cheng, Zhongzhou; Zhou, Wenhan; Gu, Yu; Chen, Xiang; Zeng, Haibo; Zhang, Shengli.
Afiliação
  • Guo T; MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing210094, China.
  • Song X; MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing210094, China.
  • Wei P; MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing210094, China.
  • Li J; MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing210094, China.
  • Gao Y; MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing210094, China.
  • Cheng Z; MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing210094, China.
  • Zhou W; MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing210094, China.
  • Gu Y; MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing210094, China.
  • Chen X; MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing210094, China.
  • Zeng H; MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing210094, China.
  • Zhang S; MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing210094, China.
ACS Appl Mater Interfaces ; 14(50): 56384-56394, 2022 Dec 21.
Article em En | MEDLINE | ID: mdl-36484601
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Assunto da revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Ano de publicação: 2022 Tipo de documento: Article País de afiliação: China
Texto completo
Imprimir
XML
PubMed Links
Buscar no Google

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Assunto da revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Ano de publicação: 2022 Tipo de documento: Article País de afiliação: China