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Non-volatile electric-field control of inversion symmetry.
Caretta, Lucas; Shao, Yu-Tsun; Yu, Jia; Mei, Antonio B; Grosso, Bastien F; Dai, Cheng; Behera, Piush; Lee, Daehun; McCarter, Margaret; Parsonnet, Eric; K P, Harikrishnan; Xue, Fei; Guo, Xiangwei; Barnard, Edward S; Ganschow, Steffen; Hong, Zijian; Raja, Archana; Martin, Lane W; Chen, Long-Qing; Fiebig, Manfred; Lai, Keji; Spaldin, Nicola A; Muller, David A; Schlom, Darrell G; Ramesh, Ramamoorthy.
Afiliação
  • Caretta L; Department of Materials Science and Engineering, University of California, Berkeley, CA, USA. lucas_caretta@brown.edu.
  • Shao YT; School of Engineering, Brown University, Providence, RI, USA. lucas_caretta@brown.edu.
  • Yu J; School of Applied and Engineering Physics, Cornell University, Ithaca, NY, USA.
  • Mei AB; Mork Family Department of Chemical Engineering and Materials Science, University of Southern California, Los Angeles, CA, USA.
  • Grosso BF; Department of Physics, University of Texas, Austin, TX, USA.
  • Dai C; Department of Materials Science and Engineering, Cornell University, Ithaca, NY, USA.
  • Behera P; Department of Materials, ETH Zurich, Zurich, Switzerland.
  • Lee D; Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, USA.
  • McCarter M; Department of Materials Science and Engineering, University of California, Berkeley, CA, USA.
  • Parsonnet E; Department of Physics, University of Texas, Austin, TX, USA.
  • K P H; Department of Physics, University of California, Berkeley, CA, USA.
  • Xue F; Department of Physics, University of California, Berkeley, CA, USA.
  • Guo X; School of Applied and Engineering Physics, Cornell University, Ithaca, NY, USA.
  • Barnard ES; Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, USA.
  • Ganschow S; State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, China.
  • Hong Z; Hangzhou Global Scientific and Technological Innovation Center, Zhejiang University, Hangzhou, China.
  • Raja A; Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, USA.
  • Martin LW; Leibniz-Institut für Kristallzüchtung, Berlin, Germany.
  • Chen LQ; State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, China.
  • Fiebig M; Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, USA.
  • Lai K; Department of Materials Science and Engineering, University of California, Berkeley, CA, USA.
  • Spaldin NA; Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA.
  • Muller DA; Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, USA.
  • Schlom DG; Department of Materials, ETH Zurich, Zurich, Switzerland.
  • Ramesh R; Department of Physics, University of Texas, Austin, TX, USA.
Nat Mater ; 22(2): 207-215, 2023 Feb.
Article em En | MEDLINE | ID: mdl-36536139
Competition between ground states at phase boundaries can lead to significant changes in properties under stimuli, particularly when these ground states have different crystal symmetries. A key challenge is to stabilize and control the coexistence of symmetry-distinct phases. Using BiFeO3 layers confined between layers of dielectric TbScO3 as a model system, we stabilize the mixed-phase coexistence of centrosymmetric and non-centrosymmetric BiFeO3 phases at room temperature with antipolar, insulating and polar semiconducting behaviour, respectively. Application of orthogonal in-plane electric (polar) fields results in reversible non-volatile interconversion between the two phases, hence removing and introducing centrosymmetry. Counterintuitively, we find that an electric field 'erases' polarization, resulting from the anisotropy in octahedral tilts introduced by the interweaving TbScO3 layers. Consequently, this interconversion between centrosymmetric and non-centrosymmetric phases generates changes in the non-linear optical response of over three orders of magnitude, resistivity of over five orders of magnitude and control of microscopic polar order. Our work establishes a platform for cross-functional devices that take advantage of changes in optical, electrical and ferroic responses, and demonstrates octahedral tilts as an important order parameter in materials interface design.

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nat Mater Assunto da revista: CIENCIA / QUIMICA Ano de publicação: 2023 Tipo de documento: Article País de afiliação: Estados Unidos

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nat Mater Assunto da revista: CIENCIA / QUIMICA Ano de publicação: 2023 Tipo de documento: Article País de afiliação: Estados Unidos