Atomic scale electronic structure of the ferromagnetic semiconductor Cr2Ge2Te6.
Sci Bull (Beijing)
; 63(13): 825-830, 2018 Jul 15.
Article
em En
| MEDLINE
| ID: mdl-36658961
ABSTRACT
Cr2Ge2Te6 is an intrinsic ferromagnetic semiconductor with van der Waals type layered structure, thus represents a promising material for novel electronic and spintronic devices. Here we combine scanning tunneling microscopy and first-principles calculations to investigate the electronic structure of Cr2Ge2Te6. Tunneling spectroscopy reveals a surprising large energy level shift and change of energy gap size across the ferromagnetic to paramagnetic phase transition, as well as a peculiar double-peak electronic state on the Cr-site defect. These features can be quantitatively explained by density functional theory calculations, which uncover a close relationship between the electronic structure and magnetic order. These findings shed important new lights on the microscopic electronic structure and origin of magnetic order in Cr2Ge2Te6.
Texto completo:
1
Coleções:
01-internacional
Base de dados:
MEDLINE
Idioma:
En
Revista:
Sci Bull (Beijing)
Ano de publicação:
2018
Tipo de documento:
Article
País de afiliação:
China