Operation of silicon-germanium heterojunction bipolar transistors with different structures at deep cryogenic temperature.

Yu, Guofang; Liang, Renrong; Wang, Xiawa; Xu, Jun; Ren, Tian-Ling

Yu, Guofang; Liang, Renrong; Wang, Xiawa; Xu, Jun; Ren, Tian-Ling.

Afiliação

Yu G; Institute of Microelectronics, Tsinghua University, Beijing 100084, China; Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China.
Liang R; Institute of Microelectronics, Tsinghua University, Beijing 100084, China; Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China. Electronic address: liangrr@mail.tsinghua.edu.cn.
Wang X; Institute of Microelectronics, Tsinghua University, Beijing 100084, China; Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China.
Xu J; Institute of Microelectronics, Tsinghua University, Beijing 100084, China; Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China.
Ren TL; Institute of Microelectronics, Tsinghua University, Beijing 100084, China; Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China.

Sci Bull (Beijing) ; 64(7): 469-477, 2019 Apr 15.

Article em En | MEDLINE | ID: mdl-36659798

Palavras-chave

Analytical model; Cryogenic temperature; Quantum computing; SiGe HBTs

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Tipo de estudo: Prognostic_studies Idioma: En Revista: Sci Bull (Beijing) Ano de publicação: 2019 Tipo de documento: Article País de afiliação: China

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