A Simulation Optimization Factor of Si(111)-Based AlGaN/GaN Epitaxy for High Frequency and Low-Voltage-Control High Electron Mobility Transistor Application.

Guan, He; Shen, Guiyu; Liu, Shibin; Jiang, Chengyu; Wu, Jingbo

Guan, He; Shen, Guiyu; Liu, Shibin; Jiang, Chengyu; Wu, Jingbo.

Afiliação

Guan H; School of Microelectronics, Northwestern Polytechnical University, Xi'an 710129, China.
Shen G; School of Microelectronics, Northwestern Polytechnical University, Xi'an 710129, China.
Liu S; School of Electronics and Information, Northwestern Polytechnical University, Xi'an 710129, China.
Jiang C; School of Electronics and Information, Northwestern Polytechnical University, Xi'an 710129, China.
Wu J; School of Microelectronics, Northwestern Polytechnical University, Xi'an 710129, China.

Micromachines (Basel) ; 14(1)2023 Jan 09.

Article em En | MEDLINE | ID: mdl-36677229

Palavras-chave

AlGaN/GaN epitaxy; HEMT; simulation

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Micromachines (Basel) Ano de publicação: 2023 Tipo de documento: Article País de afiliação: China

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