Sub-10 fJ/bit radiation-hard nanoelectromechanical non-volatile memory.

Lee, Yong-Bok; Kang, Min-Ho; Choi, Pan-Kyu; Kim, Su-Hyun; Kim, Tae-Soo; Lee, So-Young; Yoon, Jun-Bo

Lee, Yong-Bok; Kang, Min-Ho; Choi, Pan-Kyu; Kim, Su-Hyun; Kim, Tae-Soo; Lee, So-Young; Yoon, Jun-Bo.

Afiliação

Lee YB; School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea.
Kang MH; National NanoFab Center (NNFC), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea.
Choi PK; School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea.
Kim SH; Taiwan Semiconductor Manufacturing Company (TSMC) Ltd, Fab 21, Phoenix, AZ, USA.
Kim TS; School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea.
Lee SY; SAMSUNG ELECTRONICS Co., Ltd, 1, Samsungjeonja-ro, Hwaseong-si, Gyeonggi-do, 18448, Republic of Korea.
Yoon JB; School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea.

Nat Commun ; 14(1): 460, 2023 Jan 28.

Article em En | MEDLINE | ID: mdl-36709346

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nat Commun Assunto da revista: BIOLOGIA / CIENCIA Ano de publicação: 2023 Tipo de documento: Article

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