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Strong Exciton-Exciton Scattering of Exfoliated van der Waals InSe toward Efficient Continuous-Wave Near-Infrared P-Band Emission.
Liang, Yin; Zhao, Liyun; Li, Chun; Du, Jiaxing; Shang, Qiuyu; Wei, Zhongming; Zhang, Qing.
Afiliação
  • Liang Y; School of Materials Science and Engineering, Peking University, Beijing 100871, China.
  • Zhao L; School of Materials Science and Engineering, Peking University, Beijing 100871, China.
  • Li C; School of Materials Science and Engineering, Peking University, Beijing 100871, China.
  • Du J; School of Materials Science and Engineering, Peking University, Beijing 100871, China.
  • Shang Q; School of Materials Science and Engineering, Peking University, Beijing 100871, China.
  • Wei Z; State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
  • Zhang Q; School of Materials Science and Engineering, Peking University, Beijing 100871, China.
Nano Lett ; 23(9): 4058-4065, 2023 May 10.
Article em En | MEDLINE | ID: mdl-37083440
ABSTRACT
P-band emission is a superlinear low-coherence emission through exciton-exciton (X-X) scattering into photon-like states. It occurs without the prerequisites of population inversion or macroscopical coherence, rendering lower power consumption than the widely explored superlinear low-coherence emissions including superfluorescence, amplified spontaneous emission, and random lasing, and holds great potential for speckle-free imaging and interferometric sensing. However, competition processes including exciton dissociation and annihilation undermine its operation at room temperature and/or low excitation conditions. Here we report room-temperature P-band emission from InSe microflakes with excitation density of 1010 cm-2, offering 2-orders-of-magnitude lower operation density compared to the state-of-the-art superlinear low-coherence emissions. The efficient P-band emission is attributed to a large X-X scattering strength of 0.25 µeV µm2 due to enhanced spatial confinement along with intrinsic material metrics of 3D/2D exciton complex and asymmetric electron/hole mass. These findings open an avenue toward strong low-coherence near-infrared light sources based on van der Waals semiconductors.
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nano Lett Ano de publicação: 2023 Tipo de documento: Article País de afiliação: China

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nano Lett Ano de publicação: 2023 Tipo de documento: Article País de afiliação: China