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Optically Active Telecom Defects in MoTe2 Fewlayers at Room Temperature.
Lei, Yuxin; Lin, Qiaoling; Xiao, Sanshui; Li, Juntao; Fang, Hanlin.
Afiliação
  • Lei Y; State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-Sen University, Guangzhou 510275, China.
  • Lin Q; Department of Electrical and Photonics Engineering, Technical University of Denmark, 2800 Kongens Lyngby, Denmark.
  • Xiao S; NanoPhoton-Center for Nanophotonics, Technical University of Denmark, 2800 Kongens Lyngby, Denmark.
  • Li J; Department of Electrical and Photonics Engineering, Technical University of Denmark, 2800 Kongens Lyngby, Denmark.
  • Fang H; NanoPhoton-Center for Nanophotonics, Technical University of Denmark, 2800 Kongens Lyngby, Denmark.
Nanomaterials (Basel) ; 13(9)2023 Apr 27.
Article em En | MEDLINE | ID: mdl-37177044

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nanomaterials (Basel) Ano de publicação: 2023 Tipo de documento: Article País de afiliação: China

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nanomaterials (Basel) Ano de publicação: 2023 Tipo de documento: Article País de afiliação: China