Emerging Memtransistors for Neuromorphic System Applications: A Review.

You, Tao; Zhao, Miao; Fan, Zhikang; Ju, Chenwei

You, Tao; Zhao, Miao; Fan, Zhikang; Ju, Chenwei.

Afiliação

You T; High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics of the Chinese Academy of Sciences, 3 Beitucheng West Road, Beijing 100029, China.
Zhao M; University of Chinese Academy of Sciences, Beijing 100029, China.
Fan Z; High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics of the Chinese Academy of Sciences, 3 Beitucheng West Road, Beijing 100029, China.
Ju C; University of Chinese Academy of Sciences, Beijing 100029, China.

Sensors (Basel) ; 23(12)2023 Jun 07.

Article em En | MEDLINE | ID: mdl-37420582

Assuntos

Inteligência Artificial; Nanotubos de Carbono; Humanos; Encéfalo

Palavras-chave

ferroelectric material; memtransistors; neuromorphic behavior; resistive switching

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Assunto principal: Inteligência Artificial / Nanotubos de Carbono Limite: Humans Idioma: En Revista: Sensors (Basel) Ano de publicação: 2023 Tipo de documento: Article País de afiliação: China

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