A stable rhombohedral phase in ferroelectric Hf(Zr)1+xO2 capacitor with ultralow coercive field.

Wang, Yuan; Tao, Lei; Guzman, Roger; Luo, Qing; Zhou, Wu; Yang, Yang; Wei, Yingfen; Liu, Yu; Jiang, Pengfei; Chen, Yuting; Lv, Shuxian; Ding, Yaxin; Wei, Wei; Gong, Tiancheng; Wang, Yan; Liu, Qi; Du, Shixuan; Liu, Ming

A stable rhombohedral phase in ferroelectric Hf(Zr)₁₊_xO₂ capacitor with ultralow coercive field.

Wang, Yuan; Tao, Lei; Guzman, Roger; Luo, Qing; Zhou, Wu; Yang, Yang; Wei, Yingfen; Liu, Yu; Jiang, Pengfei; Chen, Yuting; Lv, Shuxian; Ding, Yaxin; Wei, Wei; Gong, Tiancheng; Wang, Yan; Liu, Qi; Du, Shixuan; Liu, Ming.

Afiliação

Wang Y; State Key Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China.
Tao L; Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China.
Guzman R; School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, China.
Luo Q; School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, China.
Zhou W; State Key Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China.
Yang Y; Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China.
Wei Y; School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, China.
Liu Y; State Key Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China.
Jiang P; Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China.
Chen Y; Frontier Institute of Chip and System, Fudan University, Shanghai, China.
Lv S; State Key Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China.
Ding Y; Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China.
Wei W; State Key Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China.
Gong T; Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China.
Wang Y; State Key Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China.
Liu Q; Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China.
Du S; State Key Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China.
Liu M; Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China.

Science ; 381(6657): 558-563, 2023 Aug 04.

Article em En | MEDLINE | ID: mdl-37535726

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Science Ano de publicação: 2023 Tipo de documento: Article País de afiliação: China

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