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Device-Algorithm Co-Optimization for an On-Chip Trainable Capacitor-Based Synaptic Device with IGZO TFT and Retention-Centric Tiki-Taka Algorithm.
Won, Jongun; Kang, Jaehyeon; Hong, Sangjun; Han, Narae; Kang, Minseung; Park, Yeaji; Roh, Youngchae; Seo, Hyeong Jun; Joe, Changhoon; Cho, Ung; Kang, Minil; Um, Minseong; Lee, Kwang-Hee; Yang, Jee-Eun; Jung, Moonil; Lee, Hyung-Min; Oh, Saeroonter; Kim, Sangwook; Kim, Sangbum.
Afiliação
  • Won J; Department of Materials Science & Engineering, Inter-university Semiconductor Research Center, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea.
  • Kang J; Department of Materials Science & Engineering, Inter-university Semiconductor Research Center, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea.
  • Hong S; Device Solutions, Samsung Electronics, Pyeongtaek, 17786, Republic of Korea.
  • Han N; Department of Materials Science & Engineering, Inter-university Semiconductor Research Center, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea.
  • Kang M; Department of Materials Science & Engineering, Inter-university Semiconductor Research Center, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea.
  • Park Y; Department of Materials Science & Engineering, Inter-university Semiconductor Research Center, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea.
  • Roh Y; Department of Materials Science & Engineering, Inter-university Semiconductor Research Center, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea.
  • Seo HJ; Department of Materials Science & Engineering, Inter-university Semiconductor Research Center, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea.
  • Joe C; Department of Materials Science & Engineering, Inter-university Semiconductor Research Center, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea.
  • Cho U; Department of Materials Science & Engineering, Inter-university Semiconductor Research Center, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea.
  • Kang M; Department of Semiconductor System Engineering, Korea University, Seoul, 02841, Republic of Korea.
  • Um M; School of Electrical Engineering, Korea University, Seoul, 02841, Republic of Korea.
  • Lee KH; Samsung Advanced Institute of Technology (SAIT), Samsung Electronics, Suwon-si, 16678, Republic of Korea.
  • Yang JE; Samsung Advanced Institute of Technology (SAIT), Samsung Electronics, Suwon-si, 16678, Republic of Korea.
  • Jung M; Samsung Advanced Institute of Technology (SAIT), Samsung Electronics, Suwon-si, 16678, Republic of Korea.
  • Lee HM; School of Electrical Engineering, Korea University, Seoul, 02841, Republic of Korea.
  • Oh S; Department of Electrical and Electronic Engineering, Hanyang University, Ansan, 15588, Republic of Korea.
  • Kim S; Samsung Advanced Institute of Technology (SAIT), Samsung Electronics, Suwon-si, 16678, Republic of Korea.
  • Kim S; Department of Materials Science & Engineering, Inter-university Semiconductor Research Center, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea.
Adv Sci (Weinh) ; 10(29): e2303018, 2023 Oct.
Article em En | MEDLINE | ID: mdl-37559176
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Tipo de estudo: Prognostic_studies Idioma: En Revista: Adv Sci (Weinh) Ano de publicação: 2023 Tipo de documento: Article
Texto completo
Imprimir
XML
PubMed Links
Buscar no Google

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Tipo de estudo: Prognostic_studies Idioma: En Revista: Adv Sci (Weinh) Ano de publicação: 2023 Tipo de documento: Article