Modulating the resistive switching stability of HfO<sub>2</sub>-based RRAM through Gd doping engineering: DFT+<i>U</i>.

Zhang, Dong-Lan; Wang, Jiong; Wu, Qing; Du, Yong

Modulating the resistive switching stability of HfO₂-based RRAM through Gd doping engineering: DFT+U.

Zhang, Dong-Lan; Wang, Jiong; Wu, Qing; Du, Yong.

Afiliação

Zhang DL; State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083, China. wangjionga@csu.edu.cn.
Wang J; State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083, China. wangjionga@csu.edu.cn.
Wu Q; Information and Network Center, Central South University, Changsha, Hunan, 410083, China.
Du Y; State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083, China. wangjionga@csu.edu.cn.

Phys Chem Chem Phys ; 25(33): 22388-22400, 2023 Aug 23.

Article em En | MEDLINE | ID: mdl-37581208

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Phys Chem Chem Phys Assunto da revista: BIOFISICA / QUIMICA Ano de publicação: 2023 Tipo de documento: Article País de afiliação: China

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