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Diverse long-term potentiation and depression based on multilevel LiSiOxmemristor for neuromorphic computing.
Wu, Zeyu; Li, Zewen; Lin, Xin; Shan, Xin; Chen, Gang; Yang, Chen; Zhao, Xuanyu; Sun, Zheng; Hu, Kai; Wang, Fang; Ren, Tianling; Song, Zhitang; Zhang, Kailiang.
Afiliação
  • Wu Z; School of Integrated Circuit Science and Engineering, Tianjin Key Laboratory of Film Electronic and Communication Devices, Tianjin University of Technology, Tianjin 300384, People's Republic of China.
  • Li Z; School of Integrated Circuit Science and Engineering, Tianjin Key Laboratory of Film Electronic and Communication Devices, Tianjin University of Technology, Tianjin 300384, People's Republic of China.
  • Lin X; School of Integrated Circuit Science and Engineering, Tianjin Key Laboratory of Film Electronic and Communication Devices, Tianjin University of Technology, Tianjin 300384, People's Republic of China.
  • Shan X; School of Integrated Circuit Science and Engineering, Tianjin Key Laboratory of Film Electronic and Communication Devices, Tianjin University of Technology, Tianjin 300384, People's Republic of China.
  • Chen G; School of Integrated Circuit Science and Engineering, Tianjin Key Laboratory of Film Electronic and Communication Devices, Tianjin University of Technology, Tianjin 300384, People's Republic of China.
  • Yang C; School of Integrated Circuit Science and Engineering, Tianjin Key Laboratory of Film Electronic and Communication Devices, Tianjin University of Technology, Tianjin 300384, People's Republic of China.
  • Zhao X; School of Microelectronics, Fudan University, Shanghai 200433, People's Republic of China.
  • Sun Z; School of Integrated Circuit Science and Engineering, Tianjin Key Laboratory of Film Electronic and Communication Devices, Tianjin University of Technology, Tianjin 300384, People's Republic of China.
  • Hu K; School of Integrated Circuit Science and Engineering, Tianjin Key Laboratory of Film Electronic and Communication Devices, Tianjin University of Technology, Tianjin 300384, People's Republic of China.
  • Wang F; School of Integrated Circuit Science and Engineering, Tianjin Key Laboratory of Film Electronic and Communication Devices, Tianjin University of Technology, Tianjin 300384, People's Republic of China.
  • Ren T; Beijing National Research Center for Information Science and Technology, Institute of Microelectronics, Tsinghua University, Beijing 100084, People's Republic of China.
  • Song Z; Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China.
  • Zhang K; School of Integrated Circuit Science and Engineering, Tianjin Key Laboratory of Film Electronic and Communication Devices, Tianjin University of Technology, Tianjin 300384, People's Republic of China.
Nanotechnology ; 34(47)2023 Sep 04.
Article em En | MEDLINE | ID: mdl-37586343
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nanotechnology Ano de publicação: 2023 Tipo de documento: Article
Texto completo
Imprimir
XML
PubMed Links
Buscar no Google

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nanotechnology Ano de publicação: 2023 Tipo de documento: Article