The role of oxygen incorporation in Ni (111) substrates on the growth of hexagonal boron nitride monolayers.

Li, Yuan; Gomez, Hector; Tran, Jason; He, Yanwei; Shou, Chengyun; Yang, Tianchen; Wei, Peng; Lake, Roger K; Liu, Jianlin

Li, Yuan; Gomez, Hector; Tran, Jason; He, Yanwei; Shou, Chengyun; Yang, Tianchen; Wei, Peng; Lake, Roger K; Liu, Jianlin.

Afiliação

Li Y; Department of Electrical and Computer Engineering, University of California, Riverside, CA 92521, United States of America.
Gomez H; Department of Electrical and Computer Engineering, University of California, Riverside, CA 92521, United States of America.
Tran J; Department of Physics and Astronomy, University of California, Riverside, CA 92521, United States of America.
He Y; Department of Electrical and Computer Engineering, University of California, Riverside, CA 92521, United States of America.
Shou C; Department of Electrical and Computer Engineering, University of California, Riverside, CA 92521, United States of America.
Yang T; Department of Electrical and Computer Engineering, University of California, Riverside, CA 92521, United States of America.
Wei P; Department of Physics and Astronomy, University of California, Riverside, CA 92521, United States of America.
Lake RK; Department of Electrical and Computer Engineering, University of California, Riverside, CA 92521, United States of America.
Liu J; Department of Electrical and Computer Engineering, University of California, Riverside, CA 92521, United States of America.

Nanotechnology ; 34(50)2023 Oct 05.

Article em En | MEDLINE | ID: mdl-37722366

Palavras-chave

catalyst-assisted growth; hexagonal boron nitride (h-BN); molecular beam epitaxy (MBE); two dimensional (2D) materials

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nanotechnology Ano de publicação: 2023 Tipo de documento: Article País de afiliação: Estados Unidos

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