Gauge Invariant Formulation of the Semiconductor Bloch Equations.
Phys Rev Lett
; 131(23): 236902, 2023 Dec 08.
Article
em En
| MEDLINE
| ID: mdl-38134772
ABSTRACT
We derive gauge invariant semiconductor Bloch equations (GI-SBEs) that contain only gauge invariant band structure; shift vectors, and triple phase products. The validity and utility of the GI-SBEs is demonstrated in intense laser driven solids with broken inversion symmetry and nontrivial topology. The GI-SBEs present a useful platform for modeling and interpreting light-matter interactions in solids, in which the gauge freedom of the Bloch basis functions obscures physics and creates numerical obstacles.
Texto completo:
1
Coleções:
01-internacional
Base de dados:
MEDLINE
Idioma:
En
Revista:
Phys Rev Lett
Ano de publicação:
2023
Tipo de documento:
Article
País de afiliação:
Canadá