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Polyoxometalate-Modified g-C3N4 Composites with High Work Function for Triboelectric Nanogenerators.
Su, Ying; Liu, Xiaodong; Wang, Haoyu; Hao, Yijia; Guan, Lianyue; Chen, Weilin.
Afiliação
  • Su Y; Key Laboratory of Polyoxometalate and Reticular Material Chemistry of Ministry of Education Department of Chemistry, Northeast Normal University, Changchun, Jilin 130024, P. R. China.
  • Liu X; Dalian No.102 Middle School, Dalian 116103, P. R. China.
  • Wang H; Key Laboratory of Polyoxometalate and Reticular Material Chemistry of Ministry of Education Department of Chemistry, Northeast Normal University, Changchun, Jilin 130024, P. R. China.
  • Hao Y; Center for Advanced Analytical Science, Guangzhou Key Laboratory of Sensing Materials and Devices, Guangdong Engineering Technology Research Center for Photoelectric Sensing Materials and Devices, c/o School of Chemistry and Chemical Engineering, Guangzhou University, Guangzhou 510006, P. R. China.
  • Guan L; Key Laboratory of Polyoxometalate and Reticular Material Chemistry of Ministry of Education Department of Chemistry, Northeast Normal University, Changchun, Jilin 130024, P. R. China.
  • Chen W; Department of Hepatobiliary-Pancreatic Surgery, China-Japan Union Hospital of Jilin University, Xiantai Street 126, Changchun 130033, P. R. China.
Inorg Chem ; 63(2): 1328-1336, 2024 Jan 15.
Article em En | MEDLINE | ID: mdl-38166367
ABSTRACT
Designing friction materials with high electron storage capacity, high work function, low cost, and high stability is an important method to improve the output performance of a triboelectric nanogenerator (TENG). Here, we report two kinds of friction materials based on Keggin-type polyoxometalates (POMs)-modified graphite carbon nitride (g-C3N4), namely, g-C3N4@PMo12 and g-C3N4@PW12, and form TENG with commercial indium tin oxide/poly(ethylene terephthalate) (ITO/PET) electrodes. The performance test shows that the g-C3N4@PMo12 TENG device exhibits a high output voltage of about 78 V, a current of about 657 nA, and a transfer charge of about 15 nC, which is more than 3 times higher than that of unmodified TENG. This performance improvement is attributed to the fact that POM loaded on the surface of g-C3N4 can be used as a shallow electron trap to increase the electron storage capacity through electron interaction and to increase the charge density on the surface of the material by increasing the work function of the composite. This work not only broadens the choices of TENG friction materials but also offers a practical means of enhancing TENG's output performance.

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Inorg Chem Ano de publicação: 2024 Tipo de documento: Article

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Inorg Chem Ano de publicação: 2024 Tipo de documento: Article