Narrow linewidth laser based on a sidewall grating active distributed Bragg reflector.
Opt Express
; 32(7): 12012-12023, 2024 Mar 25.
Article
em En
| MEDLINE
| ID: mdl-38571036
ABSTRACT
We demonstrated a narrow linewidth semiconductor laser based on a deep-etched sidewall grating active distributed Bragg reflector (SG-ADBR). The coupling coefficients and reflectance were numerically simulated for deep-etched fifth-order SG-ADBR, and a reflectance of 0.86 with a bandwidth of 1.04â
nm was obtained by the finite element method for a 500-period SG-ADBR. Then the fifth-order SG-ADBR lasers were fabricated using projection i-line lithography processes. Single-mode lasing at 1537.9â
nm was obtained with a high side-mode suppression ratio (SMSR) of 65â
dB, and a continuous tuning range of 10.3â
nm was verified with SMSRs greater than 53â
dB. Furthermore, the frequency noise power spectral density was characterized, from which a Lorentzian linewidth of 288 kHz was obtained.
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01-internacional
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MEDLINE
Idioma:
En
Revista:
Opt Express
Assunto da revista:
OFTALMOLOGIA
Ano de publicação:
2024
Tipo de documento:
Article