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Ultrathin Sn-doped Ga2O3 for power field-effect transistors: Si-compatible 4-inch array with high-k gate dielectric.
Liu, Zi-Chun; Li, Jia-Cheng; Yang, Hui-Xia; Yang, Han; Huang, Yuan; Zhang, Yi-Yun; Lai, Pui-To; Ma, Yuan-Xiao; Wang, Ye-Liang.
Afiliação
  • Liu ZC; School of Integrated Circuits and Electronics and Yangtze Delta Region Academy, Beijing Institute of Technology, Beijing 100081, China.
  • Li JC; School of Integrated Circuits and Electronics and Yangtze Delta Region Academy, Beijing Institute of Technology, Beijing 100081, China.
  • Yang HX; School of Integrated Circuits and Electronics and Yangtze Delta Region Academy, Beijing Institute of Technology, Beijing 100081, China.
  • Yang H; School of Integrated Circuits and Electronics and Yangtze Delta Region Academy, Beijing Institute of Technology, Beijing 100081, China.
  • Huang Y; School of Integrated Circuits and Electronics and Yangtze Delta Region Academy, Beijing Institute of Technology, Beijing 100081, China.
  • Zhang YY; R&D Center for Solid-state Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
  • Lai PT; Department of Electrical and Electronic Engineering, The University of Hong Kong, Hong Kong 999077, China.
  • Ma YX; School of Integrated Circuits and Electronics and Yangtze Delta Region Academy, Beijing Institute of Technology, Beijing 100081, China. Electronic address: yxma@bit.edu.cn.
  • Wang YL; School of Integrated Circuits and Electronics and Yangtze Delta Region Academy, Beijing Institute of Technology, Beijing 100081, China. Electronic address: yeliang.wang@bit.edu.cn.
Sci Bull (Beijing) ; 69(12): 1848-1851, 2024 Jun 30.
Article em En | MEDLINE | ID: mdl-38782660
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Sci Bull (Beijing) Ano de publicação: 2024 Tipo de documento: Article País de afiliação: China
Texto completo
Imprimir
XML
PubMed Links
Buscar no Google

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Sci Bull (Beijing) Ano de publicação: 2024 Tipo de documento: Article País de afiliação: China