Compact Wideband Tapered Slot Antenna Using Fan-Shaped and Stepped Structures for Chipless Radio-Frequency-Identification Sensor Tag Applications.

ABSTRACT

In this paper, two kinds of miniaturization methods for designing a compact wideband tapered slot antenna (TSA) using either fan-shaped structures only or fan-shaped and stepped structures were proposed. First, a miniaturization method appending the fan-shaped structures, such as quarter circular slots (QCSs), half circular slots (HCSs), and half circular patches (HCPs), to the sides of the ground conductor for the TSA was investigated. The effects of appending the QCSs, HCSs, and HCPs sequentially on the input reflection coefficient and gain characteristics of the TSA were compared. The compact wideband TSA using the first miniaturization method showed the simulated frequency band for a voltage standing wave ratio (VSWR) less than 2 of 2.530-13.379 GHz (136.4%) with gain in the band ranging 3.1-6.9 dBi. Impedance bandwidth was increased by 29.7% and antenna size was reduced by 39.1%, compared to the conventional TSA. Second, the fan-shaped structures combined with the stepped structures (SSs) were added to the sides of the ground conductor to further miniaturize the TSA. The fan-shaped structures based on the HCSs and HCPs were appended to the ground conductor with the QCSs and SSs. The compact wideband TSA using the second miniaturization method had the simulated frequency band for a VSWR less than 2 of 2.313-13.805 GHz (142.6%) with gain in the band ranging 3.0-8.1 dBi. Impedance bandwidth was increased by 37.8% and antenna size was reduced by 45.9%, compared to the conventional TSA. Therefore, the increase in impedance bandwidth and the size reduction effect of the compact wideband TSA using the second miniaturization method were better compared to those using the first method. In addition, sidelobe levels at high frequencies decreased while gain at high frequencies increased. A prototype of the compact wideband TSA using the second miniaturization method was fabricated on an RF-35 substrate to validate the simulation results. The measured frequency band for a VSWR less than 2 was 2.320-13.745 GHz (142.2%) with measured gain ranging 3.1-7.9 dBi.