MoO3 nanowire growth on VO2/WO3 for thermochromic applications.

This study explores the structural, electronic, and optical properties of sandwich-structured thin films composed of WO3, MoWO3, and MoO3 as window layers on VO2/WO3via a physical vapor deposition method. Morphological analysis demonstrates the evolution of distinct nanowires, offering insights into the lattice strain of the VO2 layer toward high-performance thermochromatic devices. Temperature-dependent sheet resistivity is investigated, showcasing significant improvements in conductivity for samples with MoO3 as a window layer. The electrical and optical properties of the MoO3/VO2/WO3 device showed a phase transition temperature (Tc) of 36.8 °C, a transmittance luminous (Tlum) of 54.57%, and a solar modulation ability (ΔTsol) of 12.43. This comprehensive analysis contributes to understanding the growth of nanowires on multi-layered thin films, offering valuable insights into potential applications in bright windows.

Negative capacitance in Au/CuInGaSe2/SiO2/n-Si/Al Schottky barrier diode devices.

This study pioneers the use of CuInGaSe2, a quaternary alloy, in Schottky barrier diodes, beyond its traditional application in solar cells, highlighting its potential in sustainable energy technologies such as supercapacitors. We delve into its unique electrical and dielectric characteristics by introducing CuInGaSe2 into the Schottky barrier diode device, synthesized via an innovative liquid phase epitaxy on silicon substrates. Our investigation into the structural, electrical, and dielectric properties reveals the alloy's exceptional capacitance behavior, which transitions from positive to negative with varying frequency. It takes negative values at a frequency of 12 900 Hz and a temperature of 300 K. In comparison, at a frequency of 1216 Hz, all curves take negative and positive values, demonstrating significant promise for enhancing the efficiency and sustainability of energy storage solutions. These findings contribute to the advancement of supercapacitor production and underscore the broader applicability of CuInGaSe2 in promoting sustainable energy technologies.

Influence of the Hubbard U Correction on the Electronic Properties and Chemical Bands of the Cubic (Pm3¯m) Phase of SrTiO3 Using GGA/PBE and LDA/CA-PZ Approximations.

By using DFT simulations employing the GGA/PBE and LDA/CA-PZ approximations, the effects of the Hubbard U correction on the crystal structure, electronic properties, and chemical bands of the cubic phase (Pm3¯m) of STO were investigated. Our findings showed that the cubic phase (Pm3¯m) STO's band gaps and lattice parameters/volume are in reasonably good accordance with the experimental data, supporting the accuracy of our model. By applying the DFT + U method, we were able to obtain band gaps that were in reasonably good agreement with the most widely used experimental band gaps of the cubic (Pm3¯m) phase of STO, which are 3.20 eV, 3.24 eV, and 3.25 eV. This proves that the Hubbard U correction can overcome the underestimation of the band gaps induced by both GGA/PBE and LDA/CA-PZ approximations. On the other hand, the Sr-O and Ti-O bindings appear predominantly ionic and covalent, respectively, based on the effective valence charges, electron density distribution, and partial density of states analyses. In an attempt to enhance the performance of STO for new applications, these results might also be utilized as theoretical guidance, benefitting from our precise predicted values of the gap energies of the cubic phase (Pm3¯m).

Utilizing Gold Nanoparticle Decoration for Enhanced UV Photodetection in CdS Thin Films Fabricated by Pulsed Laser Deposition: Exploiting Plasmon-Induced Effects.

UV sensors hold significant promise for various applications in both military and civilian domains. However, achieving exceptional detectivity, responsivity, and rapid rise/decay times remains a notable challenge. In this study, we address this challenge by investigating the photodetection properties of CdS thin films and the influence of surface-deposited gold nanoparticles (AuNPs) on their performance. CdS thin films were produced using the pulsed laser deposition (PLD) technique on glass substrates, with CdS layers at a 100, 150, and 200 nm thickness. Extensive characterization was performed to evaluate the thin films' structural, morphological, and optical properties. Photodetector devices based on CdS and AuNPs/CdS films were fabricated, and their performance parameters were evaluated under 365 nm light illumination. Our findings demonstrated that reducing CdS layer thickness enhanced performance concerning detectivity, responsivity, external quantum efficiency (EQE), and photocurrent gain. Furthermore, AuNP deposition on the surface of CdS films exhibited a substantial influence, especially on devices with thinner CdS layers. Among the configurations, AuNPs/CdS(100 nm) demonstrated the highest values in all evaluated parameters, including detectivity (1.1×1012 Jones), responsivity (13.86 A/W), EQE (47.2%), and photocurrent gain (9.2).

Efficiency of InN/InGaN/GaN Intermediate-Band Solar Cell under the Effects of Hydrostatic Pressure, In-Compositions, Built-in-Electric Field, Confinement, and Thickness.

This paper presents a thorough numerical investigation focused on optimizing the efficiency of quantum-well intermediate-band solar cells (QW-IBSCs) based on III-nitride materials. The optimization strategy encompasses manipulating confinement potential energy, controlling hydrostatic pressure, adjusting compositions, and varying thickness. The built-in electric fields in (In, Ga)N alloys and heavy-hole levels are considered to enhance the results' accuracy. The finite element method (FEM) and Python 3.8 are employed to numerically solve the Schrödinger equation within the effective mass theory framework. This study reveals that meticulous design can achieve a theoretical photovoltaic efficiency of quantum-well intermediate-band solar cells (QW-IBSCs) that surpasses the Shockley-Queisser limit. Moreover, reducing the thickness of the layers enhances the light-absorbing capacity and, therefore, contributes to efficiency improvement. Additionally, the shape of the confinement potential significantly influences the device's performance. This work is critical for society, as it represents a significant advancement in sustainable energy solutions, holding the promise of enhancing both the efficiency and accessibility of solar power generation. Consequently, this research stands at the forefront of innovation, offering a tangible and impactful contribution toward a greener and more sustainable energy future.

Dielectric properties of epitaxially grown lattice-mismatched GaAs/p-Si heterojunction diode.

The current work presents the possibility of tuning the dielectric parameters by changing the temperature, voltage, and frequency. The unusual behavior of some parameters was attributed to the lattice mismatch constant between gallium arsenide (GaAs) and silicon (Si) and the crystal defects between them. In this article, a thin GaAs film has been grown on Si substrates by liquid phase epitaxial (LPE) as n-GaAs/p-Si heterostructure. Despite the lattice mismatch between GaAs and Si, our interest in this article was focused on investigating the electrical and dielectric properties by I-V and C-V measurements. This was distinguished in the behavior of the dielectric properties such as the imaginary part of modules M″, the real and imaginary part of electrical conductivity σ ' ac and σ ″ ac, respectively, which has not been seen before at high frequencies.

The Impact of Boron Compounds on the Structure and Ionic Conductivity of LATP Solid Electrolytes.

The increasing demand for safe and high-energy-density battery systems has led to intense research into solid electrolytes for rechargeable batteries. One of these solid electrolytes is the NASICON-type Li1+xAlxTi2-x(PO4)3 (LATP) material. In this study, different boron compounds (10% B2O3 doped, 10% H3BO3 doped, and 5% B2O3 + 5% H3BO3 doped) were doped at total 10 wt.% into the Ti4+ sites of an LATP solid electrolyte to investigate the structural properties and ionic conductivity of solid electrolytes using the solid-state synthesis method. Characterization of the synthesized samples was conducted using X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM), and electrochemical impedance spectroscopy (EIS). The XRD patterns of the boron-doped LATP (LABTP) samples show that the samples have a rhombohedral phase with space group R3¯c together and low amounts of impurity phases. While all the LABTP samples exhibited similar ionic conductivity values of around 10-4 S cm-1, the LABTP2 sample doped with 10 wt.% H3BO3 demonstrated the highest ionic conductivity. These findings suggest that varying B3+ ion doping strategies in LATP can significantly advance the development of solid electrolytes for all-solid-state lithium-ion batteries.

A Comprehensive Review on Electrocatalytic Applications of 2D Metallenes.

This review introduces metallenes, a cutting-edge form of atomically thin two-dimensional (2D) metals, gaining attention in energy and catalysis. Their unique physicochemical and electronic properties make them promising for applications like catalysis. Metallenes stand out due to their abundance of under-coordinated metal atoms, enhancing the catalytic potential by improving atomic utilization and intrinsic activity. This review explores the utility of 2D metals as electrocatalysts in sustainable energy conversion, focusing on the Oxygen Evolution Reaction, Oxygen Reduction Reaction, Fuel Oxidation Reaction, and Carbon Dioxide Reduction Reaction. Aimed at researchers in nanomaterials and energy, the review is a comprehensive resource for unlocking the potential of 2D metals in creating a sustainable energy landscape.

Positive and Negative Photoconductivity in Ir Nanofilm-Coated MoO3 Bias-Switching Photodetector.

In this study, we delved into the influence of Ir nanofilm coating thickness on the optical and optoelectronic behavior of ultrathin MoO3 wafer-scale devices. Notably, the 4 nm Ir coating showed a negative Hall voltage and high carrier concentration of 1.524 × 1019 cm-3 with 0.19 nm roughness. Using the Kubelka-Munk model, we found that the bandgap decreased with increasing Ir thickness, consistent with Urbach tail energy suggesting a lower level of disorder. Regarding transient photocurrent behavior, all samples exhibited high stability under both dark and UV conditions. We also observed a positive photoconductivity at bias voltages of >0.5 V, while at 0 V bias voltage, the samples displayed a negative photoconductivity behavior. This unique aspect allowed us to explore self-powered negative photodetectors, showcasing fast response and recovery times of 0.36/0.42 s at 0 V. The intriguing negative photoresponse that we observed is linked to hole self-trapping/charge exciton and Joule heating effects.

Negative Photoconductivity in 2D α-MoO3/Ir Self-Powered Photodetector: Impact of Post-Annealing.

Surface plasmon technology is regarded as having significant potential for the enhancement of the performance of 2D oxide semiconductors, especially in terms of improving the light absorption of 2D MoO3 photodetectors. An ultrathin MoO3/Ir/SiO2/Si heterojunction Schottky self-powered photodetector is introduced here to showcase positive photoconductivity. In wafer-scale production, the initial un-annealed Mo/2 nm Ir/SiO2/Si sample displays a sheet carrier concentration of 5.76 × 1011/cm², which subsequently increases to 6.74 × 1012/cm² after annealing treatment, showing a negative photoconductivity behavior at a 0 V bias voltage. This suggests that annealing enhances the diffusion of Ir into the MoO3 layer, resulting in an increased phonon scattering probability and, consequently, an extension of the negative photoconductivity behavior. This underscores the significance of negative photoconductive devices in the realm of optoelectronic applications.

High-Energy Radiation Effects on Silicon NPN Bipolar Transistor Electrical Performance: A Study with 1 MeV Proton Irradiation.

This study investigates the degradation of the silicon NPN transistor's emitter-base junction, specifically the 2N2219A model, under both forward and reverse polarization. We examine the current-voltage characteristics under the influence of 1 MeV proton irradiation at various fluencies, which are 5.3×108,5.3×1010,5×1011,5×1012, and 5×1013 protons/cm², all conducted at 307 K. The experimental findings elucidate a pronounced dependency of diode parameters, including the reverse saturation current, series resistance, and the non-idealist factor, on the incident proton flow. This observation underscores that proton-induced degradation is primarily driven by displacement damage, while recorded degradation is predominantly attributed to the generation of defects and interfacial traps within the transistor resulting from exposure to high-energy radiation. Our findings indicate that the effects of irradiation align more closely with the compensation phenomenon in doping rather than its reinforcement.

Enhancing Emission via Radiative Lifetime Manipulation in Ultrathin InGaN/GaN Quantum Wells: The Effects of Simultaneous Electric and Magnetic Fields, Thickness, and Impurity.

Ultra-thin quantum wells, with their unique charge confinement effects, are essential in enhancing the electronic and optical properties crucial for optoelectronic device optimization. This study focuses on theoretical investigations into radiative recombination lifetimes in nanostructures, specifically addressing both intra-subband (ISB: e-e) and band-to-band (BTB: e-hh) transitions within InGaN/GaN quantum wells (QWs). Our research unveils that the radiative lifetimes in ISB and BTB transitions are significantly influenced by external excitation, particularly in thin-layered QWs with strong confinement effects. In the case of ISB transitions (e-e), the recombination lifetimes span a range from 0.1 to 4.7 ns, indicating relatively longer durations. On the other hand, BTB transitions (e-hh) exhibit quicker lifetimes, falling within the range of 0.01 to 1 ns, indicating comparatively faster recombination processes. However, it is crucial to note that the thickness of the quantum well layer exerts a substantial influence on the radiative lifetime, whereas the presence of impurities has a comparatively minor impact on these recombination lifetimes. This research advances our understanding of transition lifetimes in quantum well systems, promising enhancements across optoelectronic applications, including laser diodes and advanced technologies in detection, sensing, and telecommunications.