RESUMEN
We report on a very significant enhancement of the thermal, chemical, and mechanical stability of self-organized TiO2 nanotubes layers, provided by thin Al2O3 coatings of different thicknesses prepared by atomic layer deposition (ALD). TiO2 nanotube layers coated with Al2O3 coatings exhibit significantly improved thermal stability as illustrated by the preservation of the nanotubular structure upon annealing treatment at high temperatures (870 °C). In addition, a high anatase content is preserved in the nanotube layers against expectation of the total rutile conversion at such a high temperature. Hardness of the resulting nanotube layers is investigated by nanoindentation measurements and shows strongly improved values compared to uncoated counterparts. Finally, it is demonstrated that Al2O3 coatings guarantee unprecedented chemical stability of TiO2 nanotube layers in harsh environments of concentrated H3PO4 solutions.
RESUMEN
We report on a new fabrication method of producing ytterbium doped fibers by atomic layer deposition (ALD) in combination with the conventional modified chemical vapor deposition (MCVD) technique. An MCVD soot-preform with a porous layer of SiO(2) is coated with layers of Yb(2)O(3) and Al(2)O(3) prior to sintering, using the gas-phase ALD method. An SEM/EDS material analysis study shows that the dopants successfully penetrate the full thickness of 320 µm of the soot layer. An Yb-doped fiber fabricated by this technique shows a background attenuation of 20 dB/km, a uniform longitudinal Yb-doping profile, and good laser characteristics with a slope efficiency of 80%. Furthermore, we present a comparison in terms of photodarkening between the MCVD-ALD fiber and a solution doped fiber, fabricated with the same MCVD recipe. The new MCVD-ALD fiber appears to be more photodarkening resistant.
RESUMEN
Structural and photoluminescence studies were carried out on Eu-doped Y2O3-xSx thin films grown by atomic layer deposition at 300 °C. (CH3Cp)3Y, H2O, and H2S were used as yttrium, oxygen, and sulfur precursors, respectively, while Eu(thd)3 was used as the europium precursor. The Eu oxidation state was controlled during the growth process by following the Eu(thd)3 pulse with either a H2S or O3 pulse. The Eu(thd)3/O3 pulse sequence led to photoluminescence emission above 550 nm, whereas the Eu(thd)3/H2S pulse sequence resulted in emission below 500 nm.