RESUMEN
The defects and interface engineering are efficient approaches to adjust the physical and chemical properties of nanomaterials to enhance catalytic performance. In this study, we report a new MOFs-driven porous Cu2S/MoS2-Vs octahedral semiconductor with heterostructure and photothermal effect. The introduction of sulfur vacancies directly improves the adsorption performance of CO2, and the formation of heterostructure significantly increases the charge transfer rate. The C-penetrating material obtained from MOFs not only acts as an octahedral skeleton support, but also gives photothermal effects under photoelectric conditions. The formation rate of sole C2 products in photoelectrocatalytic CO2 reduction by using Cu2S/MoS2-Vs heterostructure is up to 52 µM·h-1·cm-2 equal to the total electron transfer rate of 541 µM·h-1·cm-2. The carbene mechanism and reaction pathways were proposed and verified by 13CO2 isotopic labelling and operando Fourier transform infrared (FT-IR) spectra. The important intermediates of *CO2-, *CO, *CHO and *CHO-CHO were identified by operando FT-IR spectra. In the comparative experiments, the photothermal electrons are beneficial to C2 products. DFT calculations indicate that the presence of S vacancies (Vs) reduces the energy barrier for product generation.