Investigation of Perovskite Solar Cells Using Guanidinium Doped MAPbI3 Active Layer.

In this work, guanidinium (GA+) was doped into methylammonium lead triiodide (MAPbI3) perovskite film to fabricate perovskite solar cells (PSCs). To determine the optimal formulation of the resulting guanidinium-doped MAPbI3 ((GA)x(MA)1-xPbI3) for the perovskite active layer in PSCs, the perovskite films with various GA+ doping concentrations, annealing temperatures, and thicknesses were systematically modulated and studied. The experimental results demonstrated a 400-nm-thick (GA)x(MA)1-xPbI3 film, with 5% GA+ doping and annealed at 90 °C for 20 min, provided optimal surface morphology and crystallinity. The PSCs configured with the optimal (GA)x(MA)1-xPbI3 perovskite active layer exhibited an open-circuit voltage of 0.891 V, a short-circuit current density of 24.21 mA/cm2, a fill factor of 73.1%, and a power conversion efficiency of 15.78%, respectively. Furthermore, the stability of PSCs featuring this optimized (GA)x(MA)1-xPbI3 perovskite active layer was significantly enhanced.

Investigation of the Performance of Perovskite Solar Cells with ZnO-Covered PC61BM Electron Transport Layer.

Due to its high carrier mobility and electron transmission, the phenyl-C61-butyric acid methyl ester (PC61BM) is usually used as an electron transport layer (ETL) in perovskite solar cell (PSC) configurations. However, PC61BM films suffer from poor coverage on perovskite active layers because of their low solubility and weak adhesive ability. In this work, to overcome the above-mentioned shortcomings, 30 nm thick PC61BM ETLs with different concentrations were modeled. Using a 30 nm thick PC61BM ETL with a concentration of 50 mg/mL, the obtained performance values of the PSCs were as follows: an open-circuit voltage (Voc) of 0.87 V, a short-circuit current density (Jsc) of 20.44 mA/cm2, a fill factor (FF) of 70.52%, and a power conversion efficiency (PCE) of 12.54%. However, undesired fine cracks present on the PC61BM surface degraded the performance of the resulting PSCs. To further improve performance, multiple different thicknesses of ZnO interface layers were deposited on the PC61BM ETLs to release the fine cracks using a thermal evaporator. In addition to the pavement of fine cracks, the ZnO interface layer could also function as a hole-blocking layer due to its larger highest occupied molecular orbital (HOMO) energy level. Consequently, the PCE was improved to 14.62% by inserting a 20 nm thick ZnO interface layer in the PSCs.