Efficacy of ficin and peroxyacetic acid against Salmonella enterica serovar Thompson biofilm on plastic, eggshell, and chicken skin.

Salmonella is the leading cause of zoonotic foodborne illnesses worldwide and a prevalent threat to the poultry industry. For controlling contamination, the use of chemical sanitizers in combination with biological compounds (e.g., enzymes) offers a solution to reduce the chemical residues. The current study investigated the biofilm reduction effects of a food-grade enzyme-ficin-and a common sanitizer-peroxyacetic acid (PAA)-against an emerging pathogen, Salmonella enterica ser. Thompson, on plastic, eggshell, and chicken skin surfaces. Results showed that PAA could kill S. Thompson, but ficin cannot. Maximum biofilm reduction was 3.7 log CFU/cm2 from plastic after individual treatment with PAA. However, sequential treatment of ficin and PAA led to biofilm reductions of 3.2, 5.0, and 6.5 log CFU/cm2 from chicken skin, eggshell, and plastic, respectively. Fourier-transform infrared spectroscopy and microscopic analysis confirmed that ficin increased PAA action, causing biofilm matrix destruction. Moreover, the quality of the food surfaces was only altered by 12.5 U/mL ficin and was not altered by PAA. This combined use of enzyme and sanitizer solved major safety issues and proved promising against S. Thompson-associated contaminations in poultry and poultry processing lines.

Synergistic effects of ε-poly-l-lysine and lysozyme against Pseudomonas aeruginosa and Listeria monocytogenes biofilms on beef and food contact surfaces.

This study investigated the synergistic effects of ε-poly- L -lysine (ε-PL) and lysozyme against P. aeruginosa and L. monocytogenes biofilms. Single-culture biofilms of two bacteria were formed on silicone rubber (SR), stainless steel (SS), and beef surfaces and then treated with lysozyme (0.05-5 mg/mL) and ε-PL at minimum inhibitory concentrations (MICs) of 1 to 4 separately or in combination. On the SR surface, P. aeruginosa biofilm was reduced by 1.4 and 1.9 log CFU/cm2 within 2 h when treated with lysozyme (5 mg/mL) and ε-PL (4 MIC), respectively, but this reduction increased significantly to 4.1 log CFU/cm2 (P < 0.05) with the combined treatment. On beef surface, P. aeruginosa and L. monocytogenes biofilm was reduced by 4.2-5.0, and 3.3-4.2 log CFU/g when lysozyme was combined with 1, 2, and 4 MIC of ε-PL at 25 °C, respectively. Compared to 5 mg/mL lysozyme alone, the combined treatment with 1, 2, and 4 MIC of ε-PL on beef surface achieved additional reduction against P. aeruginosa biofilm of 0.5, 0.8, and 0.7 log CFU/g, respectively, at 25 °C. In addition, 0.25 mg/mL lysozyme and 0.5 MIC of ε-PL significantly (P < 0.05) suppressed the quorum-sensing (agrA) and virulence-associated (hlyA and prfA) genes of L. monocytogenes.

Hexagonal Boron Nitride for Surface Passivation of Two-Dimensional van der Waals Heterojunction Solar Cells.

Two-dimensional (2D) semiconductors can be promising active materials for solar cells due to their advantageous electrical and optical properties, in addition to their ability to form high-quality van der Waals (vdW) heterojunctions using a simple process. Furthermore, the atomically thin nature of these 2D materials allows them to form lightweight and transparent thin-film solar cells. However, strategies appropriate for optimizing their properties have not been extensively studied yet. In this paper, we propose a method for reducing the electrical loss of 2D vdW solar cells by introducing hexagonal boron nitride (h-BN) as a surface passivation layer. This method allowed us to enhance the photovoltaic performance of a MoS2/WSe2 solar cell. In particular, we observed ∼74% improvement of the power conversion efficiency owing to a large increase in both short-circuit current and open-circuit voltage. Such a remarkable performance enhancement was due to the reduction of the recombination rate at the junction and surface of nonoverlapped semiconductor regions, which was confirmed via a time-resolved photoluminescence analysis. Furthermore, the h-BN top layer was found to improve the long-term stability of the tested 2D solar cell under ambient conditions. We observed the evolution of our MoS2/WSe2 solar cell for a month and found that h-BN passivation effectively suppressed its degradation speed. In particular, the degradation speed of the passivated cell was twice as low as that of a nonpassivated cell. This work reveals that h-BN can successfully suppress the electrical loss and degradation of 2D vdW heterojunction solar cells under ambient conditions.

Two-Dimensional WSe2/MoS2 p-n Heterojunction-Based Transparent Photovoltaic Cell and Its Performance Enhancement by Fluoropolymer Passivation.

As a means to overcome the limitation of installation space and to promote the utilization of the solar cell in various applications, a transparent thin-film solar cell has been studied by many researchers. To achieve a transparent solar cell, the choice of materials which are transparent enough and showing the photovoltaic property at the same time is the key. Here, we suggest a two-dimensional (2D) p-n heterojunction of WSe2/MoS2 and an indium tin oxide electrode to fabricate a transparent thin-film photovoltaic cell. Because of advantages that 2D materials possess, a highly transparent (∼80%) solar cell with considerable efficiency was achieved. Furthermore, by introducing a transparent passivation layer composed of a fluoropolymer, the photovoltaic performance was much improved. With the passivation layer, our WSe2/MoS2 transparent photovoltaic cell reached an efficiency of ∼10%. A comparison of photovoltaic parameters before and after applying passivation and analysis on the origin of such differences are also discussed. To the best of our knowledge, this is the first report to fabricate a 2D material-based fully transparent photovoltaic device. Our result exhibits a great potential of the van der Waals p-n heterojunction of 2D semiconductors to be utilized for an active layer of a highly transparent and lightweight thin-film solar cell.

Physically Transient Field-Effect Transistors Based on Black Phosphorus.

Black phosphorus (BP) has shown great potential as a semiconductor material beyond graphene and MoS2 because of its intrinsic band gap and high mobility. Moreover, the biocompatibility of the final biodegradation products of BP has led to extensive research on biomedical applications. Herein, physically transient field-effect transistors (FETs) based on black phosphorus have been demonstrated using peptide insulator as a gate dielectric layer. The fabricated devices show high hole mobility up to 468 cm2 V-1 s-1 and on-off current ratio over 103. The combined use of black phosphorus, peptide, and molybdenum provides rapid disappearance of the devices within 36 h. Dissolution kinetics and cytotoxicity of black phosphorus are assessed to clarify its availability to be applied in transient electronics. This work provides transient FETs with high degradability and high performance based on biocompatible black phosphorus.

A high-performance complementary inverter based on transition metal dichalcogenide field-effect transistors.

For several years, graphene has been the focus of much attention due to its peculiar characteristics, and it is now considered to be a representative 2-dimensional (2D) material. Even though many research groups have studied on the graphene, its intrinsic nature of a zero band-gap, limits its use in practical applications, particularly in logic circuits. Recently, transition metal dichalcogenides (TMDs), which are another type of 2D material, have drawn attention due to the advantage of having a sizable band-gap and a high mobility. Here, we report on the design of a complementary inverter, one of the most basic logic elements, which is based on a MoS2 n-type transistor and a WSe2 p-type transistor. The advantages provided by the complementary metal-oxide-semiconductor (CMOS) configuration and the high-performance TMD channels allow us to fabricate a TMD complementary inverter that has a high-gain of 13.7. This work demonstrates the operation of the MoS2 n-FET and WSe2 p-FET on the same substrate, and the electrical performance of the CMOS inverter, which is based on a different driving current, is also measured.

Influence of post-annealing on the off current of MoS2 field-effect transistors.

Two-dimensional materials have recently been spotlighted, due to their unique properties in comparison with conventional bulk and thin-film materials. Among those materials, MoS2 is one of the promising candidates for the active layer of electronic devices because it shows high electron mobility and pristine band gap. In this paper, we focus on the evolution of the electrical property of the MoS2 field-effect transistor (FET) as a function of post-annealing temperature. The results indicate that the off current drastically decreased at 200°C and increased at 400°C while other factors, such as the mobility and threshold voltage, show little variation. We consider that the decreasing off current comes from the rearrangement of the MoS2 film and the elimination of the surface residue. Then, the increasing off current was caused by the change of the material's composition and adsorption of H2O and O2.