RESUMEN
We report here the synthesis and characterization of a family of copper(I) metal precursors based around cyclopentadienyl and isocyanide ligands. The molecular structures of several cyclopentadienylcopper(I) isocyanide complexes have been unambiguously determined by single-crystal X-ray diffraction analysis. Thermogravimetric analysis of the complexes highlighted the isopropyl isocyanide complex [(η(5)-C5H5)Cu(CN(i)Pr)] (2a) and the tert-butyl isocyanide complex [(η(5)-C5H5)Cu(CN(t)Bu)] (2b) as possible copper metal chemical vapor deposition (CVD) precursors. Further modification of the precursors with variation of the substituents on the cyclopentadienyl ligand system (varying between H, Me, Et, and (i)Pr) has allowed the affect that these changes would have on features such as stability, volatility, and decomposition to be investigated. As part of this study, the vapor pressures of the complexes 2b, [(η(5)-MeC5H4)Cu(CN(t)Bu)] (3b), [(η(5)-EtC5H4)Cu(CN(t)Bu)] (4b), and [(η(5)-(i)PrC5H4)Cu(CN(t)Bu)] (5b) over a 40-65 °C temperature range have been determined. Low-pressure chemical vapor deposition (LP-CVD) was employed using precursors 2a and 2b to synthesize thin films of metallic copper on silicon, gold, and platinum substrates under a H2 atmosphere. Analysis of the thin films deposited onto both silicon and gold substrates at substrate temperatures of 180 and 300 °C by scanning electron microscopy and atomic force microscopy reveals temperature-dependent growth features: Films grown at 300 °C are continuous and pinhole-free, whereas films grown at 180 °C consist of highly crystalline nanoparticles. In contrast, deposition onto platinum substrates at 180 °C shows a high degree of surface coverage with the formation of high-density, continuous, and pinhole-free thin films. Powder X-ray diffraction and X-ray photoelectron spectroscopy (XPS) both show the films to be high-purity metallic copper.
RESUMEN
This paper focuses on the development of potential single source precursors for M-N-Si (M = Ti, Zr or Hf) thin films. The titanium, zirconium, and hafnium silylimides (Me(2)N)(2)MNSiR(1)R(2)R(3) [R(1) = R(2) = R(3) = Ph, M = Ti(1), Zr (2), Hf (3); R(1) = R(2) = R(3) = Et, M = Ti (4), Zr (5), Hf (6); R(1) = R(2) = Me, R(3) = (t)Bu, M = Ti (7), Zr (8), Hf (9); R(1) = R(2) = R(3) = NMe(2), M = Ti (10), Zr (11), Hf (12)] have been synthesized by the reaction of M(NMe(2))(4) and R(3)R(2)R(1)SiNH(2). All compounds are notably sensitive to air and moisture. Compounds 1, 2, 4, and 7-10 have been structurally characterized, and all are dimeric, with the general formula [M(NMe(2))(2)(µ-NSiR(3))](2), in which the µ(2)-NSiR(3) groups bridges two four-coordinate metal centers. The hafnium compound 3 possesses the same basic dimeric structure but shows additional incorporation of liberated HNMe(2) bonded to one metal. Compounds 11 and 12 are also both dimeric but also incorporate additional µ(2)-NMe(2) groups, which bridge Si and either Zr or Hf metal centers in the solid state. The Zr and Hf metal centers are both five-coordinated in these species. Aerosol-assisted CVD (AA-CVD) using 4-7 and 9-12 as precursors generates amorphous films containing M, N, Si, C, and O; the films are dominated by MO(2) with smaller contributions from MN, MC and MSiON based on XPS binding energies.