SnO2 Films Deposited by Ultrasonic Spray Pyrolysis: Influence of Al Incorporation on the Properties.

Aluminum-doped tin oxide (SnO 2:Al) thin films were produced by an ultrasonic spray pyrolysis method. The effect of aluminum doping on structural, optical, and electrical properties of tin oxide thin films synthesized at 420 ∘C was investigated. Al doping induced a change in the morphology of tin oxide films and yielded films with smaller grain size. SnO 2 thin films undergo a structural reordering and have a texture transition from (301) to (101), and then to (002) preferred cristallographic orientation upon Al doping. The lattice parameters (a and c) decreases with Al doping, following in a first approximation Vegard's law. The optical transmission does not change in the visible region with an average transmittance value of 72-81%. Conversely, in the near infrared (NIR) region, the plasmon frequency shifts towards the IR region upon increasing Al concentration in the grown films. Nominally undoped SnO 2 have a conductivity of ∼1120 S/cm, which is at least two orders of magnitude larger than what is reported in literature. This higher conductivity is attributed to the Cl- ions in the SnCl 4.5(H 2 O) precursor, which would act as donor dopants. The introduction of Al into the SnO 2 lattice showed a decrease of the electrical conductivity of SnO 2 due to compensating hole generation. These findings will be useful for further studied tackling the tailoring of the properties of highly demanded fluorine doped tin oxide (FTO) films.

Optimized Stoichiometry for CuCrO2 Thin Films as Hole Transparent Layer in PBDD4T-2F:PC70BM Organic Solar Cells.

The performance and stability in atmospheric conditions of organic photovoltaic devices can be improved by the integration of stable and efficient photoactive materials as substituent of the chemically unstable poly (3,4-ethylene dioxythiophene):polystyrene sulfonate (PEDOT:PSS), generally used as organic hole transport layer. Promising candidates are p-type transparent conductive oxides, which combine good optoelectronic and a higher mechanical and chemical stability than the organic counterpart. In this work, we synthesize Cu-rich CuCrO2 thin films by aerosol-assisted chemical vapour deposition as an efficient alternative to PEDOT:PSS. The effect of stoichiometry on the structural, electrical, and optical properties was analysed to find a good compromise between transparency, resistivity, and energy bands alignment, to maximize the photovoltaic performances., Average transmittance and bandgap are reduced when increasing the Cu content in these out of stoichiometry CuCrO2 films. The lowest electrical resistivity is found for samples synthesized from a solution composition in the 60-70% range. The optimal starting solution composition was found at 65% of Cu cationic ratio corresponding to a singular point in Hackee's figure of merit of 1 × 10-7 Ω-1. PBDD4T-2F:PC70BM organic solar cells were fabricated by integrating CuCrO2 films grown from a solution composition ranging between 40% to 100% of Cu as hole transport layers. The solar cells integrating a film grown with a Cu solution composition of 65% achieved a power conversion efficiency as high as 3.1%, representing the best trade-off of the optoelectronic properties among the studied candidates. Additionally, despite the efficiencies achieved from CuCrO2-based organic solar cells are still inferior to the PEDOT:PSS counterpart, we demonstrated a significant enhancement of the lifetime in atmospheric conditions of optimal oxides-based organic photovoltaic devices.

Grain-boundary segregation of magnesium in doped cuprous oxide and impact on electrical transport properties.

In this study, we report the segregation of magnesium in the grain boundaries of magnesium-doped cuprous oxide (Cu2O:Mg) thin films as revealed by atom probe tomography and the consequences of the dopant presence on the temperature-dependent Hall effect properties. The incorporation of magnesium as a divalent cation was achieved by aerosol-assisted metal organic chemical vapour deposition, followed by thermal treatments under oxidizing conditions. We observe that, in comparison with intrinsic cuprous oxide, the electronic transport is improved in Cu2O:Mg with a reduction of resistivity to 13.3 ± 0.1 Ω cm, despite the reduction of hole mobility in the doped films, due to higher grain-boundary scattering. The Hall carrier concentration dependence with temperature showed the presence of an acceptor level associated with an ionization energy of 125 ± 9 meV, similar to the energy value of a large size impurity-vacancy complex. Atom probe tomography shows a magnesium incorporation of 5%, which is substantially present at the grain boundaries of the Cu2O.

Exploring the optical properties of Vernier phase yttrium oxyfluoride thin films grown by pulsed liquid injection MOCVD.

In this work, we report on the first successful deposition of Vernier phase yttrium oxyfluoride (V-YOF) thin films on Si (100) wafers using pulsed liquid injection metal organic chemical vapor deposition (PLI-MOCVD). The formation of V-YOF has been confirmed by X-ray diffraction measurements and electron probe microanalysis. The infrared phonon modes of V-YOF thin films and their corresponding optical constants as inferred from spectroscopic ellipsometry are reported here for the first time. The V-YOF thin films are featured by a broad absorption band centering around 370-373 cm-1; their refractive index is located between those of YF3 and Y2O3, and which shows an intimate relationship with the oxygen content in the film. The luminescence properties of Er3+ doped V-YOF thin films are finally examined and compared with that of YF3. Our results highlight that the as-deposited V-YOF thin films by PLI-MOCVD serve as promising candidates as efficient host material for spectral conversion for photovoltaic applications.

The initial stages of ZnO atomic layer deposition on atomically flat In0.53Ga0.47As substrates.

InGaAs is one of the III-V active semiconductors used in modern high-electron-mobility transistors or high-speed electronics. ZnO is a good candidate material to be inserted as a tunneling insulator layer at the metal-semiconductor junction. A key consideration in many modern devices is the atomic structure of the hetero-interface, which often ultimately governs the electronic or chemical process of interest. Here, a complementary suite of in situ synchrotron X-ray techniques (fluorescence, reflectivity and absorption) as well as modeling is used to investigate both structural and chemical evolution during the initial growth of ZnO by atomic layer deposition (ALD) on In0.53Ga0.47As substrates. Prior to steady-state growth behavior, we discover a transient regime characterized by two stages. First, substrate-inhibited ZnO growth takes place on InGaAs terraces. This leads eventually to the formation of a 1 nm-thick, two-dimensional (2D) amorphous layer. Second, the growth behavior and its modeling suggest the occurrence of dense island formation, with an aspect ratio and surface roughness that depends sensitively on the growth condition. Finally, ZnO ALD on In0.53Ga0.47As is characterized by 2D steady-state growth with a linear growth rate of 0.21 nm cy-1, as expected for layer-by-layer ZnO ALD.

The quest towards epitaxial BaMgF4 thin films: exploring MOCVD as a chemical scalable approach for the deposition of complex metal fluoride films.

Conventional and Pulsed Liquid Injection MOCVD processes (C-MOCVD and PLI-MOCVD) have been explored as synthetic routes for the growth of BaMgF4 on Si (100) and single crystalline SrTiO3 (100) substrates. For the two applied approaches, the volatile, thermally stable ß-diketonate complexes Ba(hfa)2tetraglyme and Mg(hfa)2(diglyme)2(H2O)2 have been used as single precursors (C-MOCVD) or as a solution multimetal source (PLI-MOCVD). Structural characterization through X-ray diffraction (XRD) measurements and transmission electron microscopy (TEM) analyses confirmed the formation of epitaxial BaMgF4 films on SrTiO3 substrates. Energy dispersive X-ray (EDX) analyses have been used to confirm composition and purity of deposited films. The impact of process parameters on film properties has been addressed, highlighting the strong influence of precursor ratio, deposition temperature and oxygen partial pressure on composition, microstructure and morphology of the films. Both methods appear well suited for the growth of the BaMgF4 phase, but while PLI-MOCVD yields a more straightforward control of the precursor composition that reflects on film stoichiometry, C-MOCVD provides easier control of the degree of texturing as a function of temperature.