RESUMEN
We report a heterogeneous GaAs-based quantum dot (QD) avalanche photodiode (APD) on silicon with an ultralow dark current of 10 pA at -1V, 3 dB bandwidth of 20 GHz and record gain-bandwidth product (GBP) of 585 GHz. Furthermore, open eye diagrams up to 32 Gb/s are demonstrated at 1310 nm. The k-factor has been measured for these devices to be as low as 0.14. A polarization dependence on gain and bandwidth has been observed and investigated. This shows the potential to integrate a high-speed receiver in a wavelength division multiplexing (WDM) system on a QD-based silicon photonics platform.
RESUMEN
Optical switches based on ring resonator cavities were fabricated by a silicon photonics foundry process and analyzed for optical crosstalk at various data rates and channel spacings. These devices were compared to commercial bandpass filters and at 20Gb/s, 0.5dB power penalty is observed due to spectral filtering for bit error ratio threshold of 1 × 10-9. Concurrent modulation at 20Gb/s with a channel spacing as narrow as 40GHz shows error-free transmission with 1dB power penalty as compared to wider channel spacing for the ring-based switch.
RESUMEN
We report on the design, fabrication and performance of a hetero-integrated III-V on silicon distributed feedback lasers (DFB) at 1310 nm based on direct bonding and adiabatic coupling. The continuous wave (CW) regime is achieved up to 55 °C as well as mode-hop-free operation with side-mode suppression ratio (SMSR) above 55 dB. At room temperature, the current threshold is 36 mA and the maximum coupled power in the silicon waveguide is 22 mW.