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VO2 has shown great promise for sensors, smart windows, and energy storage devices, because of its drastic semiconductor-to-metal transition (SMT) near 340 K coupled with a structural transition. To push its application toward room-temperature, effective transition temperature (Tc) tuning in VO2 is desired. In this study, tailorable SMT characteristics in VO2 films have been achieved by the electrochemical intercalation of foreign ions (e.g., Li ions). By controlling the relative potential with respect to Li/Li+ during the intercalation process, Tc of VO2 can be effectively and systematically tuned in the window from 326.7 to 340.8 K. The effective Tc tuning could be attributed to the observed strain and lattice distortion and the change of the charge carrier density in VO2 introduced by the intercalation process. This demonstration opens up a new approach in tuning the VO2 phase transition toward room-temperature device applications and enables future real-time phase change property tuning.
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PURPOSE: Demonstrating multifield and inverse contrast switching of magnetocaloric high contrast ratio MRI labels that either have increasing or decreasing moment versus temperature slopes depending on the material at physiological temperatures and different MRI magnetic field strengths. METHODS: Two iron-rhodium samples of different purity (99% and 99.9%) and a lanthanum-iron-silicon sample were obtained from commercial vendors. Temperature and magnetic field-dependent magnetic moment measurements of the samples were performed on a vibrating sample magnetometer. Temperature-dependent MRI of different iron-rhodium and lanthanum-iron-silicon samples were performed on 3 different MRI scanners at 1 Tesla (T), 4.7T, and 7T. RESULTS: Sharp, first-order magnetic phase transition of each iron-rhodium sample at a physiologically relevant temperature (~37°C) but at different MRI magnetic fields (1T, 4.7T, and 7T, depending on the sample) showed clear image contrast changes in temperature-dependent MRI. Iron-rhodium and lanthanum-iron-silicon samples with sharp, first-order magnetic phase transitions at the same MRI field of 1T and physiological temperature of 37°C, but with positive and negative slope of magnetization versus temperature, respectively, showed clear inverse contrast image changes. Temperature-dependent MRI on individual microparticle samples of lanthanum-iron-silicon also showed sharp image contrast changes. CONCLUSION: Magnetocaloric materials of different purity and composition were demonstrated to act as diverse high contrast ratio switchable MRI contrast agents. Thus, we show that a range of magnetocaloric materials can be optimized for unique image contrast response under MRI-appropriate conditions at physiological temperatures and be controllably switched in situ.
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Imagen por Resonancia Magnética , Magnetismo , Hierro , Campos Magnéticos , TemperaturaRESUMEN
PURPOSE: To develop switchable and tunable labels with high contrast ratio for MRI using magnetocaloric materials that have sharp first-order magnetic phase transitions at physiological temperatures and typical MRI magnetic field strengths. METHODS: A prototypical magnetocaloric material iron-rhodium (FeRh) was prepared by melt mixing, high-temperature annealing, and ice-water quenching. Temperature- and magnetic field-dependent magnetization measurements of wire-cut FeRh samples were performed on a vibrating sample magnetometer. Temperature-dependent MRI of FeRh samples was performed on a 4.7T MRI. RESULTS: Temperature-dependent MRI clearly demonstrated image contrast changes due to the sharp magnetic state transition of the FeRh samples in the MRI magnetic field (4.7T) and at a physiologically relevant temperature (~37°C). CONCLUSION: A magnetocaloric material, FeRh, was demonstrated to act as a high contrast ratio switchable MRI contrast agent due to its sharp first-order magnetic phase transition in the DC magnetic field of MRI and at physiologically relevant temperatures. A wide range of magnetocaloric materials are available that can be tuned by materials science techniques to optimize their response under MRI-appropriate conditions and be controllably switched in situ with temperature, magnetic field, or a combination of both.
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Medios de Contraste/química , Campos Magnéticos , Imagen por Resonancia Magnética/instrumentación , Imagen por Resonancia Magnética/métodos , Calor , Hierro , Magnetismo , Ensayo de Materiales , Movimiento (Física) , Rodio , Temperatura , VibraciónRESUMEN
Probabilistic computing is a computing scheme that offers a more efficient approach than conventional complementary metal-oxide-semiconductor (CMOS)-based logic in a variety of applications ranging from optimization to Bayesian inference, and invertible Boolean logic. The probabilistic bit (or p-bit, the base unit of probabilistic computing) is a naturally fluctuating entity that requires tunable stochasticity; by coupling low-barrier stochastic magnetic tunnel junctions (MTJs) with a transistor circuit, a compact implementation is achieved. In this work, by combining stochastic MTJs with 2D-MoS2 field-effect transistors (FETs), we demonstrate an on-chip realization of a p-bit building block displaying voltage-controllable stochasticity. Supported by circuit simulations, we analyze the three transistor-one magnetic tunnel junction (3T-1MTJ) p-bit design, evaluating how the characteristics of each component influence the overall p-bit output. While the current approach has not reached the level of maturity required to compete with CMOS-compatible MTJ technology, the design rules presented in this work are valuable for future experimental implementations of scaled on-chip p-bit networks with reduced footprint.
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Nonconjugated radical polymers (i.e., macromolecules with aliphatic backbones that have stable open-shell sites along their pendant groups) have arisen as an intriguing complement to π-conjugated polymers in organic electronic devices and may prove to have superior properties in magneto-responsive applications. To date, however, the design of nonconjugated radical polymers has primarily focused on linear homopolymer, copolymer, and block polymer motifs even though conjugated dendritic macromolecules (i.e., polyradicals) have shown significant promise in terms of their response under applied magnetic fields. Here, we address this gap in creating a nonconjugated, three-arm radical macromolecule with nitroxide open-shell sites using a straightforward, single-step reaction, and we evaluated the electronic and magnetic properties of this material using a combined computational and experimental approach. The synthetic approach employed resulted in a high-purity macromolecule with a well-defined molecular weight and narrow molecular weight distribution. Moreover, epoxide-based units were implemented in the three-arm radical macromolecule design, and this resulted in a nonlinear radical macromolecule with a low (i.e., below room temperature) glass transition temperature and one that was an amorphous material in the solid state. These properties allowed thin films of the three-arm radical macromolecule to have electrical conductivity values on par with many linear radical polymers previously reported, and our computational efforts suggest the potential of higher generation open-shell dendrimers to achieve advanced electronic and magnetic properties. Importantly, the three-arm radical macromolecule also demonstrated antiferromagnetic exchange coupling between spins at temperatures < 10 K. In this way, this effort puts forward key structure-property relationships in nonlinear radical macromolecules and presents a clear path for the creation of next-generation macromolecules of this type.