Fluorescent Zn(II)-Based Metal-Organic Framework: Interaction with Organic Solvents and CO2 and Methane Capture.

Adsorption of carbon dioxide (CO2), as well as many other kinds of small molecules, is of importance for industrial and sensing applications. Metal-organic framework (MOF)-based adsorbents are spotlighted for such applications. An essential for MOF adsorbent application is a simple and easy fabrication process, preferably from a cheap, sustainable, and environmentally friendly ligand. Herein, we fabricated a novel structural, thermally stable MOF with fluorescence properties, namely Zn [5-oxo-2,3-dihydro-5H-[1,3]-thiazolo [3,2-a]pyridine-3,7-dicarboxylic acid (TPDCA)] • dimethylformamide (DMF) •0.25 H2O (coded as QUF-001 MOF), in solvothermal conditions by using zinc nitrate as a source of metal ion and TPDCA as a ligand easy accessible from citric acid and cysteine. Single crystal X-ray diffraction analysis and microscopic examination revealed the two-dimensional character of the formed MOF. Upon treatment of QUF-001 with organic solvents (such as methanol, isopropanol, chloroform, dimethylformamide, tetrahydrofuran, hexane), interactions were observed and changes in fluorescence maxima as well as in the powder diffraction patterns were noticed, indicating the inclusion and intercalation of the solvents into the interlamellar space of the crystal structure of QUF-001. Furthermore, CO2 and CH4 molecule sorption properties for QUF-001 reached up to 1.6 mmol/g and 8.1 mmol/g, respectively, at 298 K and a pressure of 50 bars.

Effects of core strengthening exercise on colon transit time in young adult women.

BACKGROUND/OBJECTIVE: This study investigated the effects of core strengthening exercise (CSE) on colon transit time (CTT) in young adult women. METHODS: Eighty women (mean age 23 years) were enrolled and randomly assigned to participate in a 12-week, instructor-led group CSE program (CSE group [CSEG]; n = 40) or to maintain usual daily activities (control group [CG]; n = 40). 27 participants in the CSEG and 21 participants in the CG completed the study. The CSE program consisted of 60-min sessions, two days a week, for 12 weeks. CTT was measured using a multiple marker technique with a radio-opaque marker. Data were analyzed with a 2-way, repeated measures ANCOVA. RESULTS: After the 12-week intervention, The CSEG showed significant improvements in trunk flexor power (P = 0.031), peak torque (P = 0.032), and endurance (P = 0.011). The CSEG also showed improvements in the sit-up (P < 0.001) and side-step (P = 0.043) tests compared to the CG. While there was not a significant group difference between the CSEG and CG, left CTT (P = 0.021) and total CTT (P = 0.006) decreased significantly within the CSEG group only. CONCLUSION: The 12-week CSE program increased abdominal strength but did not improve CTT compared to the control group. This study also provides preliminary data that CSE may reduce left CTT and total CTT, but additional clinical trials are needed.

Enhancement of Co nucleation on the TaN(x) film surface in Co MOCVD.

In this work, the Co film was deposited by chemical vapor deposition (CVD) on TaN(x)/SiO2/Si substrate at various NH3/H2 gas flow ratio (0, 0.08, 0.11, 0.17, 0.2) to form the continuous layer. It was found that Co film can achieve a low resistivity of 63 microomega-cm, high nucleation density, and a low root-mean-square roughness of 0.79 nm at 0.17 of NH3/H2 gas flow ratio. Moreover, by using fourier transform infrared spectroscopy (FT-IR) analysis, the effect of NH3 gas was confirmed as a reaction catalyst.

Improvement in the Positive Bias Temperature Stability of SnOx-Based Thin Film Transistors by Hf and Zn Doping.

We investigated the performance of tin oxide thin film transistors (TFTs) using DC magnetron sputtering. A remarkable improvement in the transfer characteristics was obtained for the Hf-doped tin oxide (HTO) TFT. We also developed amorphous hafnium-zinc-tin oxide (HZTO) thin film transistors and investigated the effects of hafnium doping on the electrical characteristics of the HTO TFTs. Doping with hafnium resulted in a reduced defect density in the tin oxide channel layer related to oxygen vacancies, which may result from increased field effect mobility. Zinc atoms have relatively higher oxidation potential compared to tin atoms, so more oxygen molecules can be absorbed and more electrons are trapped in the HZTO films. The HZTO TFTs exhibited good electrical characteristics with a field effect mobility of 10.98 cm2/Vs, and a high ION/IOFF ratio over 10(8).

Characterization of Mn-Based Self-Forming Barriers on Low-k Samples With or Without UV Curing Treatment.

In the present work, we report a Cu-Mn alloy as a material for the self-forming barrier process, and we investigated the diffusion barrier properties of the self-formed layer on low-k dielectrics with or without UV curing treatment. Cu alloy films with 3.8 at% Mn were directly deposited onto low-k dielectrics by co-sputtering followed by annealing at various temperatures. The self-formed layers were investigated by transmission electron microscopy (TEM) and energy-dispersive X-ray spectroscopy (EDS). In order to compare barrier properties between the Mn-based self-formed layer on low-k dielectric with UV curing and the interlayer on low-k dielectric without UV curing, thermal stability was measured at various thermal stress temperatures. Our results indicated that the formation of the barrier at the interface of Cu-Mn alloy/low-k dielectric was enhanced by UV curing due to changes in the porosity and C concentration in the dielectric layer.

Effective contact resistance of zinc-tin oxide-based thin film transistors.

We investigated different source/drain (S/D) electrode materials in thin-film transistors (TFTs) based on amorphous zinc-tin oxide (ZTO) semiconductors. The transfer length, channel conductance, and effective contact resistance between the S/D electrodes and the a-ZTO channel layer were examined. Total ON resistance (R(T)), transfer length (L(T)) and effective contact resistance (R(c-eff)) were extracted by the well-known transmission-line method (TLM) using a series of TFTs with different channel lengths. When the width of ZTO channel layer was fixed as 50 µm, the lengths were varying from 10 to 50 µm. The channel layer and S/D electrode were defined by lift-off process and for the S/D electrodes, indium-tin oxide (ITO), Cu, and Mo were used. The resistivity and work function values of electrode materials were considered when selected as candidates for S/D electrodes of ZTO-TFTs. The results showed that the ZTO-TFTs with Mo S/D electrodes had the lowest effective contact resistance indicating that ZTO-TFTs with Mo electrodes have better electrical performance compared to others.