Ultrahigh Detectivity Broad Spectrum UV Photodetector with Rapid Response Speed Based on p-ß Ga2 O3 /n-GaN Heterojunction Fabricated by a Reversed Substitution Doping Method.

An excellent broad-spectrum (220-380 nm) UV photodetector, covering the UVA-UVC wavelength range, with an ultrahigh detectivity of ≈1015  cm Hz1/2 W-1 , is reported. It is based on a p-ß Ga2 O3 /n-GaN heterojunction, in which p-ß Ga2 O3 is synthesized by thermal oxidation of GaN and a heterostructure is constructed with the bottom n-GaN. XRD shows the oxide layer is (-201) preferred oriented ß-phase Ga2 O3 films. SIMS and XPS indicate that the residual N atoms as dopants remain in ß Ga2 O3 . XPS also demonstrates that the Fermi level is 0.2 eV lower than the central level of the band gap, indicating that the dominant carriers are holes and the ß Ga2 O3 is p-type conductive. Under a bias of -5 V, the photoresponsivity is 56 and 22 A W-1 for 255 and 360 nm, respectively. Correspondingly, the detectivities reach an ultrahigh value of 2.7 × 1015  cm Hz1/2 W-1 (255 nm) and 1.1 × 1015  cm Hz1/2 W-1 (360 nm). The high performance of this UV photodetector is attributed mainly to the continuous conduction band of the p-ß Ga2 O3 /n-GaN heterojunction without a potential energy barrier, which is more helpful for photogenerated electron transport from the space charge region to the n-type GaN layer.

Enhanced Performance of Self-Powered Ga2O3/ZnO:V Heterojunction Solar-Blind Ultraviolet Photodetectors by Coupling Ferroelectricity and Piezoelectricity.

Ferroelectric materials have aroused increasing interest in the field of self-powered ultraviolet (UV) photodetectors (PDs) for their switchable spontaneous polarization. However, the utilization of ferroelectric materials to modulate the built-in electric field and energy band at the junction interface has rarely been investigated. Herein, we design and fabricate self-powered solar-blind UV PDs based on a Ga2O3/ZnO:V heterojunction. The performance of the Ga2O3/ZnO:V PD is significantly enhanced through the reasonable coupling of ferroelectricity and piezoelectricity within the ZnO:V film. The device at 260 nm exhibits excellent photoelectric properties with high peak responsivity of 64.5 mA/W, a specific detectivity of 3.8 × 1010 Jones, and a rise/decay time of 1.9/45.2 µs, together with reproducibility and stability. Systematical energy band diagram analysis reveals that the excellent performance of Ga2O3/ZnO:V PD can be attributed to the driving forces arising from the addition of the depolarization field and piezoelectric field, which increases the intensity of built-in electric field and promotes the separation and transport of photogenerated carriers at the heterojunction interface. The findings of our research provide a novel avenue and valuable guidance for the design of high-performance self-powered photodetectors.

High-Performance Solar-Blind Ultraviolet Photodetectors Based on ß-Ga2O3 Thin Films Grown on p-Si(111) Substrates with Improved Material Quality via an AlN Buffer Layer Introduced by Metal-Organic Chemical Vapor Deposition.

We have achieved significantly improved device performance in solar-blind deep-ultraviolet photodetectors fabricated from ß-Ga2O3 thin films grown via metal-organic chemical vapor deposition (MOCVD) on p-Si(111) substrates by improving material quality through the use of an AlN buffer layer. High-structural-quality ß-Ga2O3 films with a (-201) preferred orientation are obtained after the introduction of the AlN buffer. Under 3 V bias, the dark current reaches a minimum of 45 fA, and the photo-to-dark current ratio (PDCR) reaches 8.5 × 105 in the photodetector with the metal-semiconductor-metal (MSM) structure. The peak responsivity and detectivity are 38.8 A/W and 2.27 × 1015 cm·Hz1/2/W, respectively, which are 16.5 and 230 times that without the buffer layer. Additionally, benefiting from the introduction of the AlN layer, the photodetection performance of the ß-Ga2O3/AlN/Si heterojunction is significantly improved. The PDCR, peak responsivity, and detectivity for the ß-Ga2O3/AlN/p-Si photodetector at 5 V bias are 2.7 × 103, 11.84 A/W, and 8.31 × 1013 cm·Hz1/2/W, respectively. The improved structural quality of ß-Ga2O3 is mainly attributed to the decreased in-plane lattice mismatch of 2.3% for ß-Ga2O3(-201)/AlN(002) compared to that of 20.83% for ß-Ga2O3(-201)/Si(111), as well as the elimination of the native amorphous SiOx surface layer on the Si substrate during the initial growth of oxide thin films.

Rapid Response Solar Blind Deep UV Photodetector with High Detectivity Based On Graphene:N/ßGa2 O3 :N/GaN p-i-n Heterojunction Fabricated by a Reversed Substitution Growth Method.

This work reports a high-detectivity solar-blind deep ultraviolet photodetector with a fast response speed, based on a nitrogen-doped graphene/ßGa2 O3 /GaN p-i-n heterojunction. The i layer of ßGa2 O3 with a Fermi level lower than the central level of the forbidden band of 0.2 eV is obtained by reversed substitution growth with oxygen replacing nitrogen in the GaN matrix, indicating the majority carrier is hole. X-ray diffractometershows that the transformation of GaN into ßGa2 O3 with (-201) preferred orientation at temperature above 900 °C in an oxygen ambient. The heterojunction shows enhanced self-powered solar blind detection ability with a response time of 3.2 µs (rise)/0.02 ms (delay) and a detectivity exceeding 1012 Jones. Under a reverse bias of -5 V, the photoresponsivity is 8.3 A W-1 with a high Ilight /Idark ratio of over 106 and a detectivity of ≈9 × 1014 Jones. The excellent performance of the device is attributed to 1) the continuous conduction band without a potential energy barrier, 2) the larger built-in potential in the heterojunction because of the downward shift of Fermi energy level in ß-Ga2 O3 , and 3) an enhanced built-in electric field in the ßGa2 O3 due to introducing p-type graphene with a high hole concentration of up to ≈1020 cm-3 .

Physicochemical characteristics and gel-forming properties of myofibrillar protein in an oxidative system affected by partial substitution of NaCl with KCl, MgCl2 or CaCl2.

Effects of partial substitution of NaCl with KCl, MgCl2 or CaCl2 on oxidative characteristics of myofibrillar protein (MP) in a hydroxyl radical generating system and their heat-induced gel properties were investigated. Results indicated that MP oxidation is dependent upon the different chloride salt types and substitution degree. MP at 0.60 M NaCl was beneficial to protein unfolding and gel quality in the oxidative system. Increased formation of disulfide bonds affected the MP conformation and resulted in a large particle size and an aggregatednetworkofgel at the 50% substitution degree of KCl. The presence of CaCl2 or MgCl2 substitutes contributed to protein polymerization and insolubility. MP aggregation restrained the formation of dense and continuous gel networks during heating, and thus resulted in a low-grade gel. Ca2+ had more serious impact on gel properties than Mg2+, dependent on different cation effects. Substitution of 25% NaCl by KCl gave acceptable gel quality in MP.

[Effects of NO3- stress on photosynthetic characteristics and nitrogen metabolism of strawber- ry seedlings].

In order to explore the effects of NO3- stress on photosynthetic characteristics and nitrogen metabolism, strawberry seedlings were grown in sand culture condition under different concentrations of NO3- (64, 112 and 160 mmol · L(-1)) with the control of 16 mmol NO3- · L(-1). The results indicated that at the 8th day after treatment, with the increased NO3- concentration, the strawberry leaf net photosynthetic rate (Pn), stomatal conductance (g(s)), PS II actual photochemical efficiency (ΦPS II), PS II maximum photochemical efficiency (Fv/Fm), and photochemical quenching coefficient (q(P)) significantly decreased, and decreased by 67.7%, 68.4%, 35.7%, 23.2% and 26.9%, respectively, when NO3- concentration reached 160 mmol · L(-1) compared with the control. The non-photochemical quenching coefficient (q(N)) increased by 4.4%, 10.9% and 75.8% respectively in the treatments of 64, 112 and 160 mmol NO3- · L(-1) compared with the control. The intercellular CO2 concentration (Ci) decreased under low NO3- concentration stress and then increased under high NO3- concentration stress, while the stomatal limitation (Ls) was vice versa. With the increased NO3- concentration, the nitrate nitrogen, ammonia nitrogen, total nitrogen and Kjeldahl nitrogen contents in the strawberry leaves and roots increased, but the protein nitrogen content decreased. The activities of nitrate reductase (NR) , glutamine sybthetase (GS), glutamate synthase (GOGAT) and glutamate dehydrogenase (GDH) increased at low NO3- concentration and then decreased at high NO3 concentration. Consequently, the net photosynthetic rate of strawberry seedling leaves decreased, the PS II electron transfer was blocked, the nitrogen accumulated with the increasing NO3- concentration, and the nitrogen metabolism enzyme activity decreased at high NO3- concentrations. When the NO3- concentration reached 64 mmol · L(-1) or higher in the nutrient solution, the growth of strawberry seedlings were inhibited significantly.

[Effects of NO3- stress on cucumber seedling growth and magnesium absorbing under suboptimal temperature].

The effects of NO3- stress on the growth and the magnesium absorption of cucumber seedlings were investigated after 1 and 14 d of suboptimal temperature [18 °C/12 °C (day/night)] treatment. The results indicated that the growth, net photosynthetic rate, transpiration rate, Fv/Fm and ΦPSII of cucumber seedlings were significantly inhibited by NO3- stress under suboptimal temperature. The magnesium content of cucumber seedlings was also significantly decreased compared with control treatment, especially in the IV treatment (suboptimal temperature +140 mmol · L(-1) NO3- + 1 mmol · L(-1) Mg2+), and the antagonistic impact of magnesium ion absorption on the absorption of potassium and calcium ion was observed. The magnesium deficiency symptom of cucumber seedlings could be partly alleviated by increasing the concentration of magnesium ion in the nutrient solution.

[Effects of different NO3- concentrations on the growth and antioxidant enzyme systems of strawberry seedlings].

The effects of different NO3- concentrations (CK, 16 mmol x L(-1) NO3-; T1, 48 mmol x L(-1) NO3-; T2, 96 mmol x L(-1) NO3-; T3, 144 mmol x L(-1) NO3-) on the growth properties and antioxidant enzymes activities of strawberry seedlings were studied by sand culture. The results indicated that the plant height, leaf area, dry matter accumulation and root/shoot ratio of strawberry seedlings in T1, T2 and T3 were significantly decreased compared to the control (CK) after 15 days of treatment. The plant heights in T1, T2 and T3 decreased by 16.1%, 36.8% and 43.9%, and the areas of functional leaf decreased by 19.7%, 34.3% and 47.5% respectively, compared to the control. With the increasing NO3- concentration, the malondialdehyde (MDA), proline, soluble protein content and relative electronic leakage of the strawberry seedlings first increased and then decreased, but all those parameters in T1, T2 and T3 were higher than in the control. The activities of antioxidant enzymes, superoxide dismutase (SOD), peroxidase (POD), ascorbate peroxidase (APX) in both root and leaf, and catalase (CAT) in the root first increased and then decreased, but the CAT activity in the leaf gradually decreased with the increasing NO3 concentration. In T3, the activity of SOD in both root and leaf, APX in the root were lower than in the control. In sum, the osmolytes of strawberry seedlings increased and the plants become weaker under nitrate stress, and some antioxidant enzymes in strawberry seedlings increased at the low level of nitrate stress and decreased at the high level. The strawberry plants were stunted when growing under 48 mmol x L(-1) NO(3-) condition.