RESUMEN
Thin SiOx interlayers are often formed naturally during the deposition of transition metal oxides on silicon surfaces due to interfacial reaction. The SiOx layer, often only several atomic layers thick, becomes the interface between the Si and deposited metal oxide and can therefore influence the electrical properties and thermal stability of the deposited stack. This work explores the potential benefits of controlling the properties of the SiOx interlayer by the introduction of pregrown high-quality SiOx which also inhibits the formation of low-quality SiOx from the metal-oxide deposition process. This work demonstrates that a high-quality pregrown SiOx can reduce the interfacial reaction and results in a more stoichiometric MoOx with improved surface passivation and thermal stability linked to its lower Dit. Detailed experimental data on carrier selectivity, carrier transport efficiency, annealing stability up to 250 °C, and in-depth material analysis are presented.