Recycling of mineral wool waste as supplementary cementitious material through thermochemical treatment.

Mineral wool is commonly used in construction as thermal insulation material. After the product's lifetime, it is classified as hazardous waste if no trademark of the European Certification Board for Mineral Wool Products (EUCEB) or the German Institute for Quality Assurance and Labelling (RAL) exists. Mineral Wool Waste (MWW) is typically landfilled in Europe, which is challenging due to its low bulk density and dimensional stability. This circumstance highlights the need for alternative recycling methods that increase the recycling rate of construction and demolition (C&D) waste. This article outlines the recycling opportunities of MWW and focuses on the use of thermochemical treatment of different mixtures of input materials to produce a supplementary cementitious material (SCM). The material characterisation results and investigations on the binder suitability demonstrate that the slag fractions after the thermochemical treatment are well-qualified to be used as reactive binder components. Additionally, a material flow analysis was conducted to estimate the substitution potential of MWW as SCM in the Austrian cement industry.

Valorisation of metallurgical residues via carbothermal reduction: A circular economy approach in the cement and iron and steel industry.

The decarbonisation of the steel and cement industry is of utmost importance in tackling climate change. Hence, steel production in modern integrated steel mills will be shifted towards electric arc furnaces in the future, in turn causing dwindling supplies of blast furnace slag, which is used as a supplementary cementitious material inter alia to reduce the CO2 emissions of cement production. Achieving a sustainable circular steel and building material economy requires the valorisation of currently landfilled steel slags and investigating utilisation options for electric arc furnace slag, which is increasingly being generated. For this purpose, different metallurgical residues and by-products were treated by carbothermal reduction in an inductively heated graphite crucible and then rapidly cooled by wet granulation, yielding a slag fraction similar to granulated blast furnace slag and a metal fraction valuable as a secondary raw material. A spreadsheet-based model was developed to calculate residue combinations to accomplish target compositions of the slag and metal fractions to fulfil previously identified requirements of the targeted cementitious and ferrous products. The results demonstrate the high accuracy of the model in predicting the properties (e.g. main oxide composition) of the generated slag and metal fraction, which fulfil the needed requirements for their use as (i) a supplementary cementitious material and (ii) a secondary raw material in steel production.

An efficient nickel hydrogen oxidation catalyst for hydroxide exchange membrane fuel cells.

The hydroxide exchange membrane fuel cell (HEMFC) is a promising energy conversion technology but is limited by the need for platinum group metal (PGM) electrocatalysts, especially for the hydrogen oxidation reaction (HOR). Here we report a Ni-based HOR catalyst that exhibits an electrochemical surface area-normalized exchange current density of 70 µA cm-2, the highest among PGM-free catalysts. The catalyst comprises Ni nanoparticles embedded in a nitrogen-doped carbon support. According to X-ray and ultraviolet photoelectron spectroscopy as well as H2 chemisorption data, the electronic interaction between the Ni nanoparticles and the support leads to balanced hydrogen and hydroxide binding energies, which are the likely origin of the catalyst's high activity. PGM-free HEMFCs employing this Ni-based HOR catalyst give a peak power density of 488 mW cm-2, up to 6.4 times higher than previous best-performing analogous HEMFCs. This work demonstrates the feasibility of efficient PGM-free HEMFCs.

Electronic Regulation of Nickel Single Atoms by Confined Nickel Nanoparticles for Energy-Efficient CO2 Electroreduction.

Modulating the electronic structure of atomically dispersed active sites is promising to boost catalytic activity but is challenging to achieve. Here we show a cooperative Ni single-atom-on-nanoparticle catalyst (NiSA/NP) prepared via direct solid-state pyrolysis, where Ni nanoparticles donate electrons to Ni(i)-N-C sites via a network of carbon nanotubes, achieving a high CO current density of 346 mA cm-2 at -0.5 V vs RHE in an alkaline flow cell. When coupled with a NiFe-based anode in a zero-gap membrane electrolyzer, the catalyst delivers an industrially relevant CO current density of 310 mA cm-2 at a low cell voltage of -2.3 V, corresponding to an overall energy efficiency of 57 %. The superior CO2 electroreduction performance is attributed to the enhanced adsorption of key intermediate COOH* on the electron-rich Ni single atoms, as well as a high density of active sites.

Ni3 N as an Active Hydrogen Oxidation Reaction Catalyst in Alkaline Medium.

Hydroxide-exchange membrane fuel cells can potentially utilize platinum-group-metal (PGM)-free electrocatalysts, offering cost and scalability advantages over more developed proton-exchange membrane fuel cells. However, there is a lack of non-precious electrocatalysts that are active and stable for the hydrogen oxidation reaction (HOR) relevant to hydroxide-exchange membrane fuel cells. Here we report the discovery and development of Ni3 N as an active and robust HOR catalyst in alkaline medium. A supported version of the catalyst, Ni3 N/C, exhibits by far the highest mass activity and break-down potential for a PGM-free catalyst. The catalyst also exhibits Pt-like activity for hydrogen evolution reaction (HER) in alkaline medium. Spectroscopy data reveal a downshift of the Ni d band going from Ni to Ni3 N and interfacial charge transfer from Ni3 N to the carbon support. These properties weaken the binding energy of hydrogen and oxygen species, resulting in remarkable HOR activity and stability.

3D Smith charts scattering parameters frequency-dependent orientation analysis and complex-scalar multi-parameter characterization applied to Peano reconfigurable vanadium dioxide inductors.

Recently, the field of Metal-Insulator-Transition (MIT) materials has emerged as an unconventional solution for novel energy efficient electronic functions, such as steep slope subthermionic switches, neuromorphic hardware, reconfigurable radiofrequency functions, new types of sensors, terahertz and optoelectronic devices. Employing radiofrequency (RF) electronic circuits with a MIT material like vanadium Dioxide, VO2, requires appropriate characterization tools and fabrication processes. In this work, we develop and use 3D Smith charts for devices and circuits having complex frequency dependences, like the ones resulting using MIT materials. The novel foundation of a 3D Smith chart involves here the geometrical fundamental notions of oriented curvature and variable homothety in order to clarify first theoretical inconsistencies in Foster and Non Foster circuits, where the driving point impedances exhibit mixed clockwise and counter-clockwise frequency dependent (oriented) paths on the Smith chart as frequency increases. We show here the unique visualization capability of a 3D Smith chart, which allows to quantify orientation over variable frequency. The new 3D Smith chart is applied as a joint complex-scalar 3D multi-parameter modelling and characterization environment for reconfigurable RF design exploiting Metal-Insulator-Transition (MIT) materials. We report fabricated inductors with record quality factors using VO2 phase transition to program multiple tuning states, operating in the range 4 GHz to 10 GHz.

Van der Waals MoS2/VO2 heterostructure junction with tunable rectifier behavior and efficient photoresponse.

Junctions between n-type semiconductors of different electron affinity show rectification if the junction is abrupt enough. With the advent of 2D materials, we are able to realize thin van der Waals (vdW) heterostructures based on a large diversity of materials. In parallel, strongly correlated functional oxides have emerged, having the ability to show reversible insulator-to-metal (IMT) phase transition by collapsing their electronic bandgap under a certain external stimulus. Here, we report for the first time the electronic and optoelectronic characterization of ultra-thin n-n heterojunctions fabricated using deterministic assembly of multilayer molybdenum disulphide (MoS2) on a phase transition material, vanadium dioxide (VO2). The vdW MoS2/VO2 heterojunction combines the excellent blocking capability of an n-n junction with a high conductivity in on-state, and it can be turned into a Schottky rectifier at high applied voltage or at temperatures higher than 68 °C, exploiting the metal state of VO2. We report tunable diode-like current rectification with a good diode ideality factor of 1.75 and excellent conductance swing of 120 mV/dec. Finally, we demonstrate unique tunable photosensitivity and excellent junction photoresponse in the 500/650 nm wavelength range.

A Steep-Slope Transistor Combining Phase-Change and Band-to-Band-Tunneling to Achieve a sub-Unity Body Factor.

Steep-slope transistors allow to scale down the supply voltage and the energy per computed bit of information as compared to conventional field-effect transistors (FETs), due to their sub-60 mV/decade subthreshold swing at room temperature. Currently pursued approaches to achieve such a subthermionic subthreshold swing consist in alternative carrier injection mechanisms, like quantum mechanical band-to-band tunneling (BTBT) in Tunnel FETs or abrupt phase-change in metal-insulator transition (MIT) devices. The strengths of the BTBT and MIT have been combined in a hybrid device architecture called phase-change tunnel FET (PC-TFET), in which the abrupt MIT in vanadium dioxide (VO2) lowers the subthreshold swing of strained-silicon nanowire TFETs. In this work, we demonstrate that the principle underlying the low swing in the PC-TFET relates to a sub-unity body factor achieved by an internal differential gate voltage amplification. We study the effect of temperature on the switching ratio and the swing of the PC-TFET, reporting values as low as 4.0 mV/decade at 25 °C, 7.8 mV/decade at 45 °C. We discuss how the unique characteristics of the PC-TFET open new perspectives, beyond FETs and other steep-slope transistors, for low power electronics, analog circuits and neuromorphic computing.