Mapping leakage currents in a nanostructure fabricated via local anodic oxidation.

The functionality of nanostructures fabricated via local anodic oxidation is limited by undesired leakage currents. We use low-temperature scanning gate microscopy to pin down the spatial position where leakage currents are most likely to occur. We show that leakage currents do not flow homogeneously along the complete barrier but at distinct weak points such as crossings of two oxide lines. These findings can be used to improve the design of such nanostructures.