Compact Model and Detailed Balance Limit for a Dual n-Type Direct Z-Scheme Heterojunction.

This paper presents a comprehensive study on a compact model and the detailed balance limit for a dual n-type direct Z-scheme heterojunction. The compact model developed in this work describes the current-voltage (IV) characteristics of the staggered heterojunction under one-sided illumination. The model incorporates charge neutrality, surface recombination, thermionic emission over the barrier, and surface potentials. By considering these factors, the IV curve of the staggered heterojunction is captured, shedding light on the charge transfer and separation processes within the device. The heterojunction device consists of two photosystems: photosystem one (PSI) with a wide band gap and photosystem two (PSII) with a narrow band gap. Furthermore, the paper establishes the detailed balance limit for the efficiency of the dual n-type direct Z-scheme heterojunction. The maximum achievable efficiency, estimated to be 11.4%, is determined by the interplay between the band gap of PSII and the empirical relation for the maximum barrier for electrons leaving PSII. This detailed balance limit represents the highest efficiency that can be attained, accounting for carrier generation, recombination, and charge transfer mechanisms. The compact model and the derived detailed balance limit provide insights for designing and improving the performance of direct Z-scheme heterojunctions.

Differences in the chemical composition of organic-walled dinoflagellate resting cysts from phototrophic and heterotrophic dinoflagellates.

Dinoflagellates constitute a large proportion of the planktonic biomass from marine to freshwater environments. Some species produce a preservable organic-walled resting cyst (dinocyst) during the sexual phase of their life cycle that is an important link between the organisms, the environment in which their parent motile theca grew, and the sedimentary record. Despite their abundance and widespread usage as proxy indicators for environmental conditions, there is a lack of knowledge regarding the dinocyst wall chemical composition. It is likely that numerous factors, including phylogeny and life strategy, determine the cyst wall chemistry. However, the extent to which this composition varies based on inherent (phylogenetic) or variable (ecological) factors has not been studied. To address this, we used micro-Fourier transform infrared spectroscopy to analyze nine cyst species produced by either phototrophic or heterotrophic dinoflagellates from the extant orders Gonyaulacales, Gymnodiniales, and Peridiniales. Based on the presence of characteristic functional groups, two significantly different cyst wall compositions are observed that correspond to the dinoflagellate's nutritional strategy. The dinocyst wall compositions analyzed appeared carbohydrate-based, but the cyst wall produced by phototrophic dinoflagellates suggested a cellulose-like glucan, while heterotrophic forms produced a nitrogen-rich glycan. This constitutes the first empirical evidence nutritional strategy is related to different dinocyst wall chemistries. Our results indicated phylogeny was less important for predicting composition than the nutritional strategy of the dinoflagellate, suggesting potential for cyst wall chemistry to infer past nutritional strategies of extinct taxa preserved in the sedimentary record.

Density and Capture Cross-Section of Interface Traps in GeSnO2 and GeO2 Grown on Heteroepitaxial GeSn.

An imperative factor in adapting GeSn as the channel material in CMOS technology, is the gate-oxide stack. The performance of GeSn transistors is degraded due to the high density of traps at the oxide-semiconductor interface. Several oxide-gate stacks have been pursued, and a midgap Dit obtained using the ac conductance method, is found in literature. However, a detailed signature of oxide traps like capture cross-section, donor/acceptor behavior and profile in the bandgap, is not yet available. We investigate the transition region between stoichiometric insulators and strained GeSn epitaxially grown on virtual Ge substrates. Al2O3 is used as high-κ oxide and either Ge1-xSnxO2 or GeO2 as interfacial layer oxide. The interface trap density (Dit) profile in the lower half of the bandgap is measured using deep level transient spectroscopy, and the importance of this technique for small bandgap materials like GeSn, is explained. Our results provide evidence for two conclusions. First, an interface traps density of 1.7 × 10(13) cm(-2)eV(-1) close to the valence band edge (Ev + 0.024 eV) and a capture cross-section (σp) of 1.7 × 10(-18) cm(2) is revealed for GeSnO2. These traps are associated with donor states. Second, it is shown that interfacial layer passivation of GeSn using GeO2 reduces the Dit by 1 order of magnitude (2.6 × 10(12) cm(-2)eV(-1)), in comparison to GeSnO2. The results are cross-verified using conductance method and saturation photovoltage technique. The Dit difference is associated with the presence of oxidized (Sn(4+)) and elemental Sn in the interfacial layer oxide.