RESUMEN
Compensated synthetic antiferromagnets (SAFs) stand out as promising candidates to explore various spintronic applications, benefitting from high precession frequency and negligible stray field. High-frequency antiferromagnetic resonance in SAFs, especially the optic mode (OM), is highly desired to attain fast operation speed in antiferromagnetic spintronic devices. SAFs exhibit ferromagnetic configurations above saturation field; however in that case, the intensity of OM is theoretically zero and hard to be detected in well-established microwave resonance experiments. To expose the hidden OM, the exchange symmetry between magnetic layers must be broken, inevitably introducing remanent magnetization. Here, we experimentally demonstrate a feasible method to break the symmetry via surface acoustic waves with the maintenance of compensated SAF structure. By introducing an out-of-plane strain gradient inside the Ir-mediated SAFs, we successfully reveal the hidden OM. Remarkably, the OM intensity can be effectively modulated by controlling strain gradients in SAFs with different thicknesses, confirmed by finite-element simulations. Our findings provide a feasible scheme for detecting the concealed OM, which would trigger future discoveries in magnon-phonon coupling and hybrid quasiparticle systems.
RESUMEN
Beta-gallium oxide (ß-Ga2O3) is emerging as a promising ultrawide band gap (UWBG) semiconductor, which is vital for high-power, high-frequency electronics and deep-UV optoelectronics. It is especially significant for flexible wearable electronics, enabling the fabrication of high-performance Ga2O3-based devices at low temperatures. However, the limited crystallinity and pronounced structural defects arising from the low-temperature deposition of Ga2O3 films significantly restrict the heterojunction interface quality and the relevant electrical performance of Ga2O3-based devices. In this work, cuprous oxide (Cu2O)/Zr-doped ß-Ga2O3 heterojunction diodes are fabricated by magnetron sputtering without intentional substrate heating, followed by an investigation into their microstructure and electrical behaviors. Zr doping can markedly enhance the Ga2O3 crystallinity at low substrate temperatures, transforming the amorphous structure of pristine Ga2O3 films into the crystallized ß phase. Moreover, crystalline ß-Ga2O3 facilitates the epitaxial growth of the Cu2O phase, suppressing the formation of detrimental secondary phase CuO at the heterojunction interface. Benefiting from the high-quality heterojunction interface, the Cu2O/Zr-doped ß-Ga2O3 heterojunction diode exhibits a near-ideal electrical behavior with a low ideality factor of 1.6. The consistent electrical parameters extracted from current-voltage (J-V) and capacitance-voltage (C-V) measurements also confirm the high quality of ß-Ga2O3. This work highlights the potential for the low-temperature production of high-quality ß-Ga2O3-based heterojunction devices through Zr doping.