Low-κ, narrow linewidth III-V-on-SOI distributed feedback lasers with backside sampled Bragg gratings.

We demonstrate a heterogeneously integrated III-V-on-SOI distributed feedback laser with a low grating strength (κ < 40 cm-1) and a narrow linewidth of Δν = 118 kHz. The laser operates single mode with a side-mode suppression ratio over 45 dB, provides a single-sided waveguide-coupled output power of 22 mW (13.4 dBm) and has a wall-plug efficiency of 17%. The dynamic characteristics were also evaluated, obtaining an intrinsic 3 dB modulation bandwidth of 14 GHz and a photon lifetime of 8 ps. Large-signal intensity modulation using a 231-1 PRBS pattern length revealed open eye diagrams up to 25 Gb/s and a penalty on the dynamic extinction ratio lower than 1 dB after transmission over a 2 km standard single mode optical fiber.

SiN integrated optical phased arrays for two-dimensional beam steering at a single near-infrared wavelength.

In this work, we present two-dimensional beam steering in the near-infrared using a SiN integrated circuit, containing optical phased arrays. Beam steering was achieved over a range of 17.6° × 3°, at a fixed wavelength of 905 nm. The first dimension was steered via phase differences between the optical phased array channels. The second dimension was accessed by actively switching between various optical phased array sub-devices containing output diffraction gratings with different periods. The characterisation was performed on a wafer-level test station.

Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station.

Optical phased arrays (OPAs) can produce low-divergence laser beams and can be used to control the emission angle electronically without the need for moving mechanical parts. This technology is particularly useful for beam steering applications. Here, we focus on OPAs integrated into SiN photonic circuits for a wavelength in the near infrared. A characterization method of such circuits is presented, which allows the output beam of integrated OPAs to be shaped and steered. Furthermore, using a wafer-scale characterization setup, several devices can easily be tested across multiple dies on a wafer. In this way, fabrication variations can be studied, and high-performance devices identified. Typical images of OPA beams are shown, including beams emitted from OPAs with and without a uniform waveguide length, and with varying numbers of channels. In addition, the evolution of output beams during the phase optimization process and beam steering in two dimensions is presented. Finally, a study of the variation in the beam divergence of identical devices is performed with respect to their position on the wafer.