Transferable nano-patterned ALD membrane.

We demonstrate fabrication of nano-patterned thin ALD (Atomic layer deposition) membrane (suspended/transferable) by using a bi-layer resist process where the bottom layer resist acts as a sacrificial layer. This method enables an all dry deterministic transfer of nano-patterned ALD membrane on desired substrate, allowing assembly of multitude of hetero-structures and functionalities that are not yet accessible. Unlike conventional ways of achieving patterned alumina membrane reported in literature our technique requires significantly less fabrication steps and paves the way for novel ALD membrane-based technology.

Band Engineering by Controlling vdW Epitaxy Growth Mode in 2D Gallium Chalcogenides.

Atomically thin quasi-2D GaSe flakes are synthesized via van der Waals (vdW) epitaxy on a polar Si (111) surface. The bandgap is continuously tuned from its commonly accepted value at 620 down to the 700 nm range, only attained previously by alloying Te into GaSe (GaSex Te1- x ). This is accomplished by manipulating various vdW epitaxy kinetic factors, which allows the choice bet ween screw-dislocation-driven and layer-bylayer growth, and the design of different morphologies with different material-substrate interaction (strain) energies.

Defects activated photoluminescence in two-dimensional semiconductors: interplay between bound, charged, and free excitons.

Point defects in semiconductors can trap free charge carriers and localize excitons. The interaction between these defects and charge carriers becomes stronger at reduced dimensionalities, and is expected to greatly influence physical properties of the hosting material. We investigated effects of anion vacancies in monolayer transition metal dichalcogenides as two-dimensional (2D) semiconductors where the vacancies density is controlled by α-particle irradiation or thermal-annealing. We found a new, sub-bandgap emission peak as well as increase in overall photoluminescence intensity as a result of the vacancy generation. Interestingly, these effects are absent when measured in vacuum. We conclude that in opposite to conventional wisdom, optical quality at room temperature cannot be used as criteria to assess crystal quality of the 2D semiconductors. Our results not only shed light on defect and exciton physics of 2D semiconductors, but also offer a new route toward tailoring optical properties of 2D semiconductors by defect engineering.